Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

Marent, A.; Nowozin, Tobias; Gelze, J.; Luckert, F.; Bimberg, Dieter

Article

Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

Marent, A.; Nowozin, Tobias; Gelze, J.; Luckert, F.; Bimberg, Dieter

Inst. Festkörperphysik

We present an InAs/GaAs quantum dot (QD) memory structure with all-electrical data access which uses holes as charge carriers. Charging and discharging of the QDs are clearly controlled by a gate voltage. The stored information is read-out by a two-dimensional hole gas underneath the QD-layer. Time resolved drain-current-measurements demonstrate the memory operation. Present write times are 80 ns.

magnetic hysteresis ohmic contacts quantum wells heterostructures electronic transport dynamic random-access-memory Hall effect field effect transistors quantum dots

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This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 95, 242114 (2009) and may be found at https://doi.org/10.1063/1.3275758.

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🆕 Date Issued:	2009-12-18
🗄 In DepositOnce:	2022-01-19