Hole-based memory operation in an InAs/GaAs quantum dot heterostructure

dc.contributor.authorMarent, A.
dc.contributor.authorNowozin, Tobias
dc.contributor.authorGelze, J.
dc.contributor.authorLuckert, F.
dc.contributor.authorBimberg, Dieter
dc.date.accessioned2022-01-19T20:36:09Z
dc.date.available2022-01-19T20:36:09Z
dc.date.issued2009-12-18
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 95, 242114 (2009) and may be found at https://doi.org/10.1063/1.3275758.en
dc.description.abstractWe present an InAs/GaAs quantum dot (QD) memory structure with all-electrical data access which uses holes as charge carriers. Charging and discharging of the QDs are clearly controlled by a gate voltage. The stored information is read-out by a two-dimensional hole gas underneath the QD-layer. Time resolved drain-current-measurements demonstrate the memory operation. Present write times are 80 ns.en
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16170
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14944
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.othermagnetic hysteresisen
dc.subject.otherohmic contactsen
dc.subject.otherquantum wellsen
dc.subject.otherheterostructuresen
dc.subject.otherelectronic transporten
dc.subject.otherdynamic random-access-memoryen
dc.subject.otherHall effecten
dc.subject.otherfield effect transistorsen
dc.subject.otherquantum dotsen
dc.titleHole-based memory operation in an InAs/GaAs quantum dot heterostructureen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber242114en
dcterms.bibliographicCitation.doi10.1063/1.3275758en
dcterms.bibliographicCitation.issue24en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume95en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften>Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen
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