Large internal dipole moment in InGaN/GaN quantum dots
dc.contributor.author | Ostapenko, Irina A. | |
dc.contributor.author | Hönig, Gerald | |
dc.contributor.author | Kindel, Christian | |
dc.contributor.author | Rodt, Sven | |
dc.contributor.author | Strittmatter, André | |
dc.contributor.author | Hoffmann, Axel | |
dc.contributor.author | Bimberg, Dieter | |
dc.date.accessioned | 2022-01-19T20:14:16Z | |
dc.date.available | 2022-01-19T20:14:16Z | |
dc.date.issued | 2010-08-09 | |
dc.description | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 97, 063103 (2010) and may be found at https://doi.org/10.1063/1.3477952. | en |
dc.description.abstract | Direct observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported. Characteristic traces of spectral diffusion, observed in cathodoluminescence of InGaN/GaN quantum dots, allow deducing the magnitude of the intrinsic dipole moment. Our experimental results are in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields. | en |
dc.description.sponsorship | DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente | en |
dc.identifier.eissn | 1077-3118 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/16166 | |
dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-14940 | |
dc.language.iso | en | en |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
dc.subject.ddc | 530 Physik | de |
dc.subject.other | quantum information | en |
dc.subject.other | chemical vapor deposition | en |
dc.subject.other | leptons | en |
dc.subject.other | emission spectroscopy | en |
dc.subject.other | excitons | en |
dc.subject.other | quantum dots | en |
dc.subject.other | semiconductors | en |
dc.subject.other | nitrides | en |
dc.subject.other | piezoelectricity | en |
dc.subject.other | luminescence | en |
dc.title | Large internal dipole moment in InGaN/GaN quantum dots | en |
dc.type | Article | en |
dc.type.version | publishedVersion | en |
dcterms.bibliographicCitation.articlenumber | 063103 | en |
dcterms.bibliographicCitation.doi | 10.1063/1.3477952 | en |
dcterms.bibliographicCitation.issue | 6 | en |
dcterms.bibliographicCitation.journaltitle | Applied Physics Letters | en |
dcterms.bibliographicCitation.originalpublishername | American Institute of Physics (AIP) | en |
dcterms.bibliographicCitation.originalpublisherplace | Melville, NY | en |
dcterms.bibliographicCitation.volume | 97 | en |
tub.accessrights.dnb | domain | en |
tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik | de |
tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
tub.affiliation.institute | Inst. Festkörperphysik | de |
tub.publisher.universityorinstitution | Technische Universität Berlin | en |
Files
Original bundle
1 - 1 of 1
Loading…
- Name:
- ostapenko_etal_2010.pdf
- Size:
- 590.81 KB
- Format:
- Adobe Portable Document Format
- Description: