Large internal dipole moment in InGaN/GaN quantum dots

dc.contributor.authorOstapenko, Irina A.
dc.contributor.authorHönig, Gerald
dc.contributor.authorKindel, Christian
dc.contributor.authorRodt, Sven
dc.contributor.authorStrittmatter, André
dc.contributor.authorHoffmann, Axel
dc.contributor.authorBimberg, Dieter
dc.date.accessioned2022-01-19T20:14:16Z
dc.date.available2022-01-19T20:14:16Z
dc.date.issued2010-08-09
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 97, 063103 (2010) and may be found at https://doi.org/10.1063/1.3477952.en
dc.description.abstractDirect observation of large permanent dipole moments of excitonic complexes in InGaN/GaN quantum dots is reported. Characteristic traces of spectral diffusion, observed in cathodoluminescence of InGaN/GaN quantum dots, allow deducing the magnitude of the intrinsic dipole moment. Our experimental results are in good agreement with realistic calculations of quantum dot transition energies for position-dependent external electric fields.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16166
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14940
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherquantum informationen
dc.subject.otherchemical vapor depositionen
dc.subject.otherleptonsen
dc.subject.otheremission spectroscopyen
dc.subject.otherexcitonsen
dc.subject.otherquantum dotsen
dc.subject.othersemiconductorsen
dc.subject.othernitridesen
dc.subject.otherpiezoelectricityen
dc.subject.otherluminescenceen
dc.titleLarge internal dipole moment in InGaN/GaN quantum dotsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber063103en
dcterms.bibliographicCitation.doi10.1063/1.3477952en
dcterms.bibliographicCitation.issue6en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume97en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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