Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

dc.contributor.authorKirste, Ronny
dc.contributor.authorRamón, Collazo
dc.contributor.authorCallsen, Gordon
dc.contributor.authorWagner, Markus R.
dc.contributor.authorKure, Thomas
dc.contributor.authorReparaz, Juan Sebastián
dc.contributor.authorMita, Seji
dc.contributor.authorXie, Jinqiao
dc.contributor.authorRice, Anthony
dc.contributor.authorTweedie, James
dc.contributor.authorSitar, Zlatko
dc.contributor.authorHoffmann, Axel
dc.date.accessioned2020-02-27T16:42:37Z
dc.date.available2020-02-27T16:42:37Z
dc.date.issued2011-11-02
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 110, 093503 (2011) and may be found at https://doi.org/10.1063/1.3656987.en
dc.description.abstractWe report on fundamental structural and optical properties of lateral polarity junctions in GaN. GaN with Ga- to N-polar junctions was grown on sapphire using an AlN buffer layer. Results from scanning electron microscopy and Raman spectroscopy measurements indicate a superior quality of the Ga-polar GaN. An extremely strong luminescence signal is observed at the inversion domain boundary (IDB). Temperature dependent micro photoluminescence measurements are used to reveal the recombination processes underlying this strong emission. At 5 K the emission mainly arises from a stripe along the inversion domain boundary with a thickness of 4-5 μm. An increase of the temperature initially leads to a narrowing to below 2 μm emission area width followed by a broadening at temperatures above 70 K. The relatively broad emission area at low temperatures is explained by a diagonal IDB. It is shown that all further changes in the emission area width are related to thermalization effects of carriers and defects attracted to the IDB. The results are successfully used to confirm a theoretical model for GaN based lateral polarity junctions. Due to the strong and pronounced emission of IDBs even at elevated temperatures, it is demonstrated that lateral polarity junctions exhibit a strong potential for future high efficiency devices.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/10859
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-9754
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherphotoluminescenceen
dc.subject.otherGaNen
dc.subject.otherlateral polarity junctionsen
dc.subject.otherRaman spectroscopyen
dc.subject.otherinversion domain boundaryen
dc.subject.othertemperature dependenten
dc.titleTemperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaNen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber093503en
dcterms.bibliographicCitation.doi10.1063/1.3656987en
dcterms.bibliographicCitation.issue9en
dcterms.bibliographicCitation.journaltitleJournal of Applied Physicsen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume110en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften>Inst. Festkörperphysik>FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen
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