Excited states of neutral donor bound excitons in GaN

dc.contributor.authorCallsen, Gordon
dc.contributor.authorKure, Thomas
dc.contributor.authorWagner, Markus R.
dc.contributor.authorButté, Raphael
dc.contributor.authorGrandjean, Nicolas
dc.date.accessioned2020-02-25T16:13:49Z
dc.date.available2020-02-25T16:13:49Z
dc.date.issued2018-06-05
dc.description.abstractWe investigate the excited states of a neutral donor bound exciton (D0X) in bulk GaN by means of high-resolution, polychromatic photoluminescence excitation (PLE) spectroscopy. The optically most prominent donor in our sample is silicon accompanied by only a minor contribution of oxygen—the key for an unambiguous assignment of excited states. Consequently, we can observe a multitude of Si0X-related excitation channels with linewidths down to 200 μeV. Two groups of excitation channels are identified, belonging either to rotational-vibrational or electronic excited states of the hole in the Si0X complex. Such identification is achieved by modeling the excited states based on the equations of motion for a Kratzer potential, taking into account the particularly large anisotropy of effective hole masses in GaN. Furthermore, several ground- and excited states of the exciton-polaritons and the dominant bound exciton are observed in the photoluminescence (PL) and PLE spectra, facilitating an estimate of the associated complex binding energies. Our data clearly show that great care must be taken if only PL spectra of D0X centers in GaN are analyzed. Every PL feature we observe at higher emission energies with regard to the Si0X ground state corresponds to an excited state. Hence, any unambiguous peak identification renders PLE spectra highly valuable, as important spectral features are obscured in common PL spectra. Here, GaN represents a particular case among the wide-bandgap, wurtzite semiconductors, as comparably low localization energies for common D0X centers are usually paired with large emission linewidths and the prominent optical signature of exciton-polaritons, making the sole analysis of PL spectra a challenging task.en
dc.description.sponsorshipEC/H2020/749565/EU/Heat Transport and its Effects on the Performance of Nanostructured, Photonic Materials/PhotoHeatEffecten
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/10833
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-9728
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc530 Physikde
dc.subject.otherGaNen
dc.subject.otherpolychromatic photoluminescence excitationen
dc.subject.otherPLEen
dc.subject.otherexcited statesen
dc.titleExcited states of neutral donor bound excitons in GaNen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber215702en
dcterms.bibliographicCitation.doi10.1063/1.5028370en
dcterms.bibliographicCitation.issue21en
dcterms.bibliographicCitation.journaltitleJournal of Applied Physicsen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume123en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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