Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

dc.contributor.authorFeneberg, Martin
dc.contributor.authorRomero, Fátima
dc.contributor.authorGoldhahn, Rüdiger
dc.contributor.authorWernicke, Tim
dc.contributor.authorReich, Christoph
dc.contributor.authorStellmach, Joachim
dc.contributor.authorMehnke, Frank
dc.contributor.authorKnauer, Arne
dc.contributor.authorWeyers, Markus
dc.contributor.authorKneissl, Michael
dc.date.accessioned2021-11-12T16:01:00Z
dc.date.available2021-11-12T16:01:00Z
dc.date.issued2021-05-17
dc.description.abstractLight emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.en
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/13879
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-12652
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc530 Physikde
dc.subject.otherquantum wellsen
dc.subject.otherphotoluminescence spectroscopyen
dc.subject.otherheterostructuresen
dc.subject.otherphotoluminescence excitation spectroscopyen
dc.subject.otherlight emitting diodesen
dc.subject.othersemiconductorsen
dc.subject.othersynchrotron radiationen
dc.titleOrigin of defect luminescence in ultraviolet emitting AlGaN diode structuresen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber202101en
dcterms.bibliographicCitation.doi10.1063/5.0047021en
dcterms.bibliographicCitation.issue20en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Inst. of Physicsen
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume118en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften>Inst. Festkörperphysik>FG Experimentelle Nanophysik und Photonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Experimentelle Nanophysik und Photonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen
Files
Original bundle
Now showing 1 - 1 of 1
Loading…
Thumbnail Image
Name:
Feneberg_etal_Origin_2021.pdf
Size:
2.08 MB
Format:
Adobe Portable Document Format
Description:
Collections