Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
dc.contributor.author | Feneberg, Martin | |
dc.contributor.author | Romero, Fátima | |
dc.contributor.author | Goldhahn, Rüdiger | |
dc.contributor.author | Wernicke, Tim | |
dc.contributor.author | Reich, Christoph | |
dc.contributor.author | Stellmach, Joachim | |
dc.contributor.author | Mehnke, Frank | |
dc.contributor.author | Knauer, Arne | |
dc.contributor.author | Weyers, Markus | |
dc.contributor.author | Kneissl, Michael | |
dc.date.accessioned | 2021-11-12T16:01:00Z | |
dc.date.available | 2021-11-12T16:01:00Z | |
dc.date.issued | 2021-05-17 | |
dc.description.abstract | Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells. | en |
dc.identifier.eissn | 1077-3118 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/13879 | |
dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-12652 | |
dc.language.iso | en | en |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en |
dc.subject.ddc | 530 Physik | de |
dc.subject.other | quantum wells | en |
dc.subject.other | photoluminescence spectroscopy | en |
dc.subject.other | heterostructures | en |
dc.subject.other | photoluminescence excitation spectroscopy | en |
dc.subject.other | light emitting diodes | en |
dc.subject.other | semiconductors | en |
dc.subject.other | synchrotron radiation | en |
dc.title | Origin of defect luminescence in ultraviolet emitting AlGaN diode structures | en |
dc.type | Article | en |
dc.type.version | publishedVersion | en |
dcterms.bibliographicCitation.articlenumber | 202101 | en |
dcterms.bibliographicCitation.doi | 10.1063/5.0047021 | en |
dcterms.bibliographicCitation.issue | 20 | en |
dcterms.bibliographicCitation.journaltitle | Applied Physics Letters | en |
dcterms.bibliographicCitation.originalpublishername | American Inst. of Physics | en |
dcterms.bibliographicCitation.originalpublisherplace | Melville, NY | en |
dcterms.bibliographicCitation.volume | 118 | en |
tub.accessrights.dnb | free | en |
tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonik | de |
tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
tub.affiliation.group | FG Experimentelle Nanophysik und Photonik | de |
tub.affiliation.institute | Inst. Festkörperphysik | de |
tub.publisher.universityorinstitution | Technische Universität Berlin | en |