Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications
dc.contributor.author | Tolunay Wipf, Selin | |
dc.contributor.author | Göritz, Alexander | |
dc.contributor.author | Wietstruck, Matthias | |
dc.contributor.author | Wipf, Christian | |
dc.contributor.author | Tillack, Bernd | |
dc.contributor.author | Mai, Andreas | |
dc.contributor.author | Kaynak, Mehmet | |
dc.date.accessioned | 2019-02-11T17:20:57Z | |
dc.date.available | 2019-02-11T17:20:57Z | |
dc.date.issued | 2017 | |
dc.description | Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich. | de |
dc.description | This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. | en |
dc.description.abstract | In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF-MEMS) switch is presented. The EM model of the WLE RF-MEMS switch is developed to estimate its RF performance. After the fabrication of the switch, the EM model is used to get accurate S-parameter simulation results. Alternative to the EM model, a small-signal model of the fabricated WLE RF-MEMS switch is developed. The developed model is integrated into a 0.13 µm SiGe BiCMOS process technology design kit for fast simulations and to predict the RF performance of the switch from a pure electrical point of view. The 0.13 µm SiGe BiCMOS embedded WLE RF-MEMS shows beyond state-of-the-art measured RF performances in D-band (110–170 GHz) and provides a high capacitance Con/Coff ratio of 11.1. The results of the both EM model and small-signal model of the switch are in very good agreement with the S-parameter measurements in D-band. The measured maximum isolation of the WLE RF-MEMS switch is 51.6 dB at 142.8 GHz with an insertion loss of 0.65 dB. | en |
dc.description.sponsorship | EC/FP7/288531/EU/Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems/NANOTEC | en |
dc.identifier.eissn | 1759-0795 | |
dc.identifier.issn | 1759-0787 | |
dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/9093 | |
dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-8194 | |
dc.language.iso | en | |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
dc.subject.ddc | 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten | de |
dc.subject.other | BiCMOS | en |
dc.subject.other | mm-wave | en |
dc.subject.other | wide band | en |
dc.subject.other | RF-MEMS | en |
dc.subject.other | SPST | en |
dc.subject.other | encapsulation | en |
dc.subject.other | monolithic integration | en |
dc.subject.other | packaging | en |
dc.subject.other | modeling | en |
dc.title | Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications | en |
dc.type | Article | en |
dc.type.version | publishedVersion | en |
dcterms.bibliographicCitation.doi | 10.1017/S1759078717000137 | |
dcterms.bibliographicCitation.issue | 6 | |
dcterms.bibliographicCitation.journaltitle | International Journal of Microwave and Wireless Technologies | en |
dcterms.bibliographicCitation.originalpublishername | Cambridge University Press | en |
dcterms.bibliographicCitation.pageend | 1278 | |
dcterms.bibliographicCitation.pagestart | 1271 | |
dcterms.bibliographicCitation.volume | 9 | |
tub.accessrights.dnb | domain | |
tub.affiliation | Fak. 4 Elektrotechnik und Informatik::Inst. Hochfrequenz- und Halbleiter-Systemtechnologien | de |
tub.affiliation.faculty | Fak. 4 Elektrotechnik und Informatik | de |
tub.affiliation.institute | Inst. Hochfrequenz- und Halbleiter-Systemtechnologien | de |
tub.publisher.universityorinstitution | Technische Universität Berlin | de |
Files
Original bundle
1 - 1 of 1