Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications

dc.contributor.authorTolunay Wipf, Selin
dc.contributor.authorGöritz, Alexander
dc.contributor.authorWietstruck, Matthias
dc.contributor.authorWipf, Christian
dc.contributor.authorTillack, Bernd
dc.contributor.authorMai, Andreas
dc.contributor.authorKaynak, Mehmet
dc.date.accessioned2019-02-11T17:20:57Z
dc.date.available2019-02-11T17:20:57Z
dc.date.issued2017
dc.descriptionDieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.de
dc.descriptionThis publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.en
dc.description.abstractIn this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF-MEMS) switch is presented. The EM model of the WLE RF-MEMS switch is developed to estimate its RF performance. After the fabrication of the switch, the EM model is used to get accurate S-parameter simulation results. Alternative to the EM model, a small-signal model of the fabricated WLE RF-MEMS switch is developed. The developed model is integrated into a 0.13 µm SiGe BiCMOS process technology design kit for fast simulations and to predict the RF performance of the switch from a pure electrical point of view. The 0.13 µm SiGe BiCMOS embedded WLE RF-MEMS shows beyond state-of-the-art measured RF performances in D-band (110–170 GHz) and provides a high capacitance Con/Coff ratio of 11.1. The results of the both EM model and small-signal model of the switch are in very good agreement with the S-parameter measurements in D-band. The measured maximum isolation of the WLE RF-MEMS switch is 51.6 dB at 142.8 GHz with an insertion loss of 0.65 dB.en
dc.description.sponsorshipEC/FP7/288531/EU/Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems/NANOTECen
dc.identifier.eissn1759-0795
dc.identifier.issn1759-0787
dc.identifier.urihttps://depositonce.tu-berlin.de//handle/11303/9093
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-8194
dc.language.isoen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeitende
dc.subject.otherBiCMOSen
dc.subject.othermm-waveen
dc.subject.otherwide banden
dc.subject.otherRF-MEMSen
dc.subject.otherSPSTen
dc.subject.otherencapsulationen
dc.subject.othermonolithic integrationen
dc.subject.otherpackagingen
dc.subject.othermodelingen
dc.titleElectromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applicationsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1017/S1759078717000137
dcterms.bibliographicCitation.issue6
dcterms.bibliographicCitation.journaltitleInternational Journal of Microwave and Wireless Technologiesen
dcterms.bibliographicCitation.originalpublishernameCambridge University Pressen
dcterms.bibliographicCitation.pageend1278
dcterms.bibliographicCitation.pagestart1271
dcterms.bibliographicCitation.volume9
tub.accessrights.dnbdomain
tub.affiliationFak. 4 Elektrotechnik und Informatik>Inst. Hochfrequenz- und Halbleiter-Systemtechnologiende
tub.affiliation.facultyFak. 4 Elektrotechnik und Informatikde
tub.affiliation.instituteInst. Hochfrequenz- und Halbleiter-Systemtechnologiende
tub.publisher.universityorinstitutionTechnische Universität Berlinde
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