Decay mechanisms in CdS‐buffered Cu(In,Ga)Se2 thin‐film solar cells after exposure to thermal stress: Understanding the role of Na

dc.contributor.authorYetkin, Hasan A.
dc.contributor.authorKodalle, Tim
dc.contributor.authorBertram, Tobias
dc.contributor.authorVillanueva‐Tovar, Alejandra
dc.contributor.authorRusu, Marin
dc.contributor.authorKlenk, Reiner
dc.contributor.authorSzyszka, Bernd
dc.contributor.authorSchlatmann, Rutger
dc.contributor.authorKaufmann, Christian A.
dc.date.accessioned2021-09-17T07:05:50Z
dc.date.available2021-09-17T07:05:50Z
dc.date.issued2021-05-26
dc.date.updated2021-09-13T08:31:32Z
dc.description.abstractDue to their tunable bandgap energy, Cu(In,Ga)Se2 (CIGSe) thin‐film solar cells are an attractive option for use as bottom devices in tandem configurations. In monolithic tandem devices, the thermal stability of the bottom device is paramount for reliable application. Ideally, it will permit the processing of a top device at the required optimum process temperature. Here, we investigate the degradation behavior of chemical bath deposited (CBD) CdS‐buffered CIGSe thin‐film solar cells with and without Na incorporation under thermal stress in ambient air and vacuum with the aim to gain a more detailed understanding of their degradation mechanisms. For the devices studied, we observe severe degradation after annealing at 300°C independent of the atmosphere. The electrical and compositional properties of the samples before and after a defined application of thermal stress are studied. In good agreement with literature reports, we find pronounced Cd diffusion into the CIGS absorber layer. In addition, for Na‐containing samples, the observed degradation can be mainly explained by the formation of Na‐induced acceptor states in the TCO front contact and a back contact barrier formation due to the out‐diffusion of Na. Supported by numerical device simulation using SCAPS‐1D, various possible degradation models are discussed and correlated with our findings.en
dc.identifier.eissn1099-159X
dc.identifier.issn1062-7995
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/13603
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-12390
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc690 Hausbau, Bauhandwerkde
dc.subject.otherCdS buffer layeren
dc.subject.otherCIGSeen
dc.subject.otherdegradation mechanismen
dc.subject.otherelemental interdiffusionen
dc.subject.otherNaen
dc.subject.otherSCAPSen
dc.subject.othersimulationen
dc.subject.otherthermal stressen
dc.titleDecay mechanisms in CdS‐buffered Cu(In,Ga)Se2 thin‐film solar cells after exposure to thermal stress: Understanding the role of Naen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1002/pip.3438en
dcterms.bibliographicCitation.issue9en
dcterms.bibliographicCitation.journaltitleProgress in Photovoltaics: Research and Applicationsen
dcterms.bibliographicCitation.originalpublishernameWileyen
dcterms.bibliographicCitation.originalpublisherplaceNew York, NYen
dcterms.bibliographicCitation.pageend1053en
dcterms.bibliographicCitation.pagestart1034en
dcterms.bibliographicCitation.volume29en
tub.accessrights.dnbfreeen
tub.affiliationFak. 4 Elektrotechnik und Informatik::Inst. Hochfrequenz- und Halbleiter-Systemtechnologien::FG Technologie für Dünnschicht-Bauelementede
tub.affiliation.facultyFak. 4 Elektrotechnik und Informatikde
tub.affiliation.groupFG Technologie für Dünnschicht-Bauelementede
tub.affiliation.instituteInst. Hochfrequenz- und Halbleiter-Systemtechnologiende
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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