The Influence of ITO Dopant Density on J-V Characteristics of Silicon Heterojunction Solar Cells: Experiments and Simulations

dc.contributor.authorKirner, Simon
dc.contributor.authorHartig, Manuel
dc.contributor.authorMazzarella, Luana
dc.contributor.authorKorte, Lars
dc.contributor.authorFrijnts, Tim
dc.contributor.authorScherg-Kurmes, Harald
dc.contributor.authorRing, Sven
dc.contributor.authorStannowski, Bernd
dc.contributor.authorRech, Bernd
dc.contributor.authorSchlatmann, Rutger
dc.date.accessioned2018-04-19T07:24:25Z
dc.date.available2018-04-19T07:24:25Z
dc.date.issued2015
dc.description.abstractThe TCO/a-Si:H(p) contact is a critical part of the silicon heterojunction solar cell. At this point, holes from the emitter have to recombine loss free with electrons from the TCO. Since tunneling is believed to be the dominant transport mechanism, a high dopant density in both adjacent layers is critical. In contrast to this, it has been reported that high TCO dopant density can reduce field effect passivation induced by the a-Si:H(p) layer. Thus, in this publication, we systematically investigate the influence of a thin (∼10 nm) ITO contact layer with dopant densities ranging from Nd = 1019 - 1021 cm-3 placed between an ITO bulk layer of 70 nm with Nd= 2·1020 cm-3 and the a-Si:H(p) emitter on the J-V characteristics, with the aim to find an optimum Nd. We accompanied our experiments by AFORS-HET simulations, considering trap-assisted tunneling and field dependent mobilities in the a-Si:H(p) layer. As expected, two regimes are visible: For low Nd the devices are limited by inefficient tunneling, resulting in S-shaped J-V characteristics. For high Nd a reduction of the field effect passivation becomes visible in the low injection range. We can qualitatively reproduce these findings using device simulations.en
dc.identifier.issn1876-6102
dc.identifier.urihttps://depositonce.tu-berlin.de//handle/11303/7616
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-6806
dc.language.isoen
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
dc.subject.othersilicon hetero junction solar cellsen
dc.subject.otherHITen
dc.subject.otherTCO/a-Si:H(p) contacten
dc.subject.otherITOen
dc.subject.othertunnelingen
dc.subject.otherAFORS-HETen
dc.titleThe Influence of ITO Dopant Density on J-V Characteristics of Silicon Heterojunction Solar Cells: Experiments and Simulationsen
dc.typeArticle
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1016/j.egypro.2015.07.103
dcterms.bibliographicCitation.journaltitleEnergy Procediaen
dcterms.bibliographicCitation.originalpublishernameElsevier BV
dcterms.bibliographicCitation.originalpublisherplaceAmsterdam [u.a.]
dcterms.bibliographicCitation.pageend732
dcterms.bibliographicCitation.pagestart725
dcterms.bibliographicCitation.volume77
tub.accessrights.dnbfree
tub.affiliationFak. 4 Elektrotechnik und Informatik>Inst. Hochfrequenz- und Halbleiter-Systemtechnologien>FG Technologie für Dünnschicht-Bauelementede
tub.affiliation.facultyFak. 4 Elektrotechnik und Informatikde
tub.affiliation.groupFG Technologie für Dünnschicht-Bauelementede
tub.affiliation.instituteInst. Hochfrequenz- und Halbleiter-Systemtechnologiende
tub.publisher.universityorinstitutionTechnische Universität Berlinde
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