Lasing and antibunching of optical phonons in semiconductor double quantum dots
dc.contributor.author | Okuyama, R. | |
dc.contributor.author | Eto, M. | |
dc.contributor.author | Brandes, Tobias | |
dc.date.accessioned | 2022-02-15T16:14:11Z | |
dc.date.available | 2022-02-15T16:14:11Z | |
dc.date.issued | 2013-08-13 | |
dc.date.updated | 2022-02-10T11:25:52Z | |
dc.description.abstract | We theoretically propose optical phonon lasing in a double quantum dot (DQD) fabricated on a semiconductor substrate. No additional cavity or resonator is required. An electron in the DQD is found to be coupled to only two longitudinal optical phonon modes that act as a natural cavity. When the energy level spacing in the DQD is tuned to the phonon energy, the electron transfer is accompanied by the emission of the phonon modes. The resulting non-equilibrium motion of electrons and phonons is analyzed by the rate equation approach based on the Born–Markov–Secular approximation. We show that lasing occurs for pumping the DQD via electron tunneling at a rate much larger than the phonon decay rate, whereas phonon antibunching is observed in the opposite regime of slow tunneling. Both effects disappear by an effective thermalization induced by the Franck–Condon effect in a DQD fabricated in a suspended carbon nanotube with strong electron–phonon coupling. | en |
dc.description.sponsorship | DFG, 163436311, SFB 910: Kontrolle selbstorganisierender nichtlinearer Systeme: Theoretische Methoden und Anwendungskonzepte | en |
dc.identifier.eissn | 1367-2630 | |
dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/16394 | |
dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-15170 | |
dc.language.iso | en | en |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | en |
dc.subject.ddc | 530 Physik | de |
dc.subject.other | optical phonons | en |
dc.subject.other | double quantum dot | en |
dc.subject.other | semiconductors | en |
dc.subject.other | DQD | en |
dc.subject.other | optical phonon lasing | en |
dc.title | Lasing and antibunching of optical phonons in semiconductor double quantum dots | en |
dc.type | Article | en |
dc.type.version | publishedVersion | en |
dcterms.bibliographicCitation.articlenumber | 083032 | en |
dcterms.bibliographicCitation.doi | 10.1088/1367-2630/15/8/083032 | en |
dcterms.bibliographicCitation.issue | 8 | en |
dcterms.bibliographicCitation.journaltitle | New Journal of Physics | en |
dcterms.bibliographicCitation.originalpublishername | IOP | en |
dcterms.bibliographicCitation.originalpublisherplace | Bristol | en |
dcterms.bibliographicCitation.volume | 15 | en |
tub.accessrights.dnb | free | en |
tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Theoretische Physik::FG Computergestützte Materialphysik | de |
tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
tub.affiliation.group | FG Computergestützte Materialphysik | de |
tub.affiliation.institute | Inst. Theoretische Physik | de |
tub.publisher.universityorinstitution | Technische Universität Berlin | en |