Lasing and antibunching of optical phonons in semiconductor double quantum dots

dc.contributor.authorOkuyama, R.
dc.contributor.authorEto, M.
dc.contributor.authorBrandes, Tobias
dc.date.accessioned2022-02-15T16:14:11Z
dc.date.available2022-02-15T16:14:11Z
dc.date.issued2013-08-13
dc.date.updated2022-02-10T11:25:52Z
dc.description.abstractWe theoretically propose optical phonon lasing in a double quantum dot (DQD) fabricated on a semiconductor substrate. No additional cavity or resonator is required. An electron in the DQD is found to be coupled to only two longitudinal optical phonon modes that act as a natural cavity. When the energy level spacing in the DQD is tuned to the phonon energy, the electron transfer is accompanied by the emission of the phonon modes. The resulting non-equilibrium motion of electrons and phonons is analyzed by the rate equation approach based on the Born–Markov–Secular approximation. We show that lasing occurs for pumping the DQD via electron tunneling at a rate much larger than the phonon decay rate, whereas phonon antibunching is observed in the opposite regime of slow tunneling. Both effects disappear by an effective thermalization induced by the Franck–Condon effect in a DQD fabricated in a suspended carbon nanotube with strong electron–phonon coupling.en
dc.description.sponsorshipDFG, 163436311, SFB 910: Kontrolle selbstorganisierender nichtlinearer Systeme: Theoretische Methoden und Anwendungskonzepteen
dc.identifier.eissn1367-2630
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16394
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-15170
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/en
dc.subject.ddc530 Physikde
dc.subject.otheroptical phononsen
dc.subject.otherdouble quantum doten
dc.subject.othersemiconductorsen
dc.subject.otherDQDen
dc.subject.otheroptical phonon lasingen
dc.titleLasing and antibunching of optical phonons in semiconductor double quantum dotsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber083032en
dcterms.bibliographicCitation.doi10.1088/1367-2630/15/8/083032en
dcterms.bibliographicCitation.issue8en
dcterms.bibliographicCitation.journaltitleNew Journal of Physicsen
dcterms.bibliographicCitation.originalpublishernameIOPen
dcterms.bibliographicCitation.originalpublisherplaceBristolen
dcterms.bibliographicCitation.volume15en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Theoretische Physik::FG Computergestützte Materialphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Computergestützte Materialphysikde
tub.affiliation.instituteInst. Theoretische Physikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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