Nitrogen and vacancy clusters in ZnO

dc.contributor.authorTuomisto, Filip
dc.contributor.authorRauch, Christian
dc.contributor.authorWagner, Markus R.
dc.contributor.authorHoffmann, Axel
dc.contributor.authorEisermann, Sebastian
dc.contributor.authorMeyer, Bruno K.
dc.contributor.authorKilanski, Lukasz
dc.contributor.authorTarun, Marianne C.
dc.contributor.authorMcCluskey, Matthew D.
dc.date.accessioned2018-02-12T09:42:50Z
dc.date.available2018-02-12T09:42:50Z
dc.date.issued2013
dc.descriptionDieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.de
dc.descriptionThis publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.en
dc.description.abstractUnderstanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities.en
dc.description.sponsorshipDFG, SFB 787, Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn2044-5326
dc.identifier.issn0884-2914
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/7421
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-6671
dc.language.isoen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subject.ddc670 Industrielle Fertigung
dc.titleNitrogen and vacancy clusters in ZnOen
dc.typeArticle
dc.type.versionpublishedVersion
dcterms.bibliographicCitation.doi10.1557/jmr.2013.195
dcterms.bibliographicCitation.issue15
dcterms.bibliographicCitation.journaltitleJournal of Materials Research
dcterms.bibliographicCitation.originalpublishernameCambridge University Press
dcterms.bibliographicCitation.originalpublisherplaceCambridge
dcterms.bibliographicCitation.pageend1983
dcterms.bibliographicCitation.pagestart1977
dcterms.bibliographicCitation.volume28
tub.accessrights.dnbdomain
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlin

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