Twofold gain enhancement by elongation of QDs in polarization preserving QD-SOAs

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dc.contributor.authorGreif, Ludwig Albrecht Thorsten
dc.contributor.authorMittelstädt, Alexander
dc.contributor.authorJagsch, Stefan Thomas
dc.contributor.authorSchliwa, Andrei
dc.date.accessioned2020-08-21T05:34:09Z
dc.date.available2020-08-21T05:34:09Z
dc.date.issued2019-06-06
dc.description.abstractThe impact of quantum dot (QD) elongation on key parameters of QD-based semiconductor optical amplifiers (SOAs) is investigated using a combination of 8-band k·p-theory including strain and piezoelectricity up to second order and a rate equation model describing the population of QD ground, excited and wetting layer states. By considering columnar QDs of selected aspect ratios, we show that chip gain and saturation gain can be enhanced by up to +3.6 dB via an increased elongation of the individual QDs while retaining polarization preserving amplification and gain recovery times below 700 fs. Our results enable the optimization of polarization preserving QD-SOA devices which combine ultrafast gain recovery with high gain and low power consumption.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1361-6641
dc.identifier.issn0268-1242
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/11586
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-10475
dc.language.isoenen
dc.relation.isreferencedby10.14279/depositonce-10409
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subject.ddc530 Physikde
dc.subject.otherself-assembled quantum dotsen
dc.subject.othersemiconductor optical amplifieren
dc.subject.otherk·p-theoryen
dc.subject.othergain enhancementen
dc.titleTwofold gain enhancement by elongation of QDs in polarization preserving QD-SOAsen
dc.typeArticleen
dc.type.versionacceptedVersionen
dcterms.bibliographicCitation.articlenumber075003en
dcterms.bibliographicCitation.doi10.1088/1361-6641/ab1c06en
dcterms.bibliographicCitation.issue7en
dcterms.bibliographicCitation.journaltitleSemiconductor Science and Technologyen
dcterms.bibliographicCitation.originalpublishernameInstitute of Physics Publishing (IOP)en
dcterms.bibliographicCitation.originalpublisherplaceBristolen
dcterms.bibliographicCitation.volume34en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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