Shallow carrier traps in hydrothermal ZnO crystals
| dc.contributor.author | Ton-That, C. | |
| dc.contributor.author | Lem, L. L. C. | |
| dc.contributor.author | Phillips, M. R. | |
| dc.contributor.author | Reisdorffer, F. | |
| dc.contributor.author | Mevellec, J. | |
| dc.contributor.author | Nguyen, T.-P. | |
| dc.contributor.author | Nenstiel, C. | |
| dc.contributor.author | Hoffmann, Axel | |
| dc.date.accessioned | 2022-02-16T13:09:40Z | |
| dc.date.available | 2022-02-16T13:09:40Z | |
| dc.date.issued | 2014-08-26 | |
| dc.date.updated | 2022-02-10T16:52:22Z | |
| dc.description.abstract | Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy, photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma doping shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO displays the expected thermal decay of bound excitons with increasing temperature from 7 K, while we observed an anomalous behaviour of the excitonic emission in H-doped ZnO, in which its intensity increases with increasing temperature in the range 140–300 K. Based on a multitude of optical results, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO. | en |
| dc.identifier.eissn | 1367-2630 | |
| dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/16405 | |
| dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-15181 | |
| dc.language.iso | en | en |
| dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | en |
| dc.subject.ddc | 530 Physik | de |
| dc.subject.other | ZnO | en |
| dc.subject.other | DLTS | en |
| dc.subject.other | cathodoluminescence | en |
| dc.title | Shallow carrier traps in hydrothermal ZnO crystals | en |
| dc.type | Article | en |
| dc.type.version | publishedVersion | en |
| dcterms.bibliographicCitation.articlenumber | 083040 | en |
| dcterms.bibliographicCitation.doi | 10.1088/1367-2630/16/8/083040 | en |
| dcterms.bibliographicCitation.issue | 8 | en |
| dcterms.bibliographicCitation.journaltitle | New Journal of Physics | en |
| dcterms.bibliographicCitation.originalpublishername | IOP | en |
| dcterms.bibliographicCitation.originalpublisherplace | Bristol | en |
| dcterms.bibliographicCitation.volume | 16 | en |
| tub.accessrights.dnb | free | en |
| tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Optische Charakterisierung von Halbleitern | de |
| tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
| tub.affiliation.group | FG Optische Charakterisierung von Halbleitern | de |
| tub.affiliation.institute | Inst. Festkörperphysik | de |
| tub.publisher.universityorinstitution | Technische Universität Berlin | en |