Decay dynamics of neutral and charged excitonic complexes in single InAs∕GaAs quantum dots

Simple item page
dc.contributor.authorFeucker, M.
dc.contributor.authorSeguin, Robert
dc.contributor.authorRodt, Sven
dc.contributor.authorHoffmann, Axel
dc.contributor.authorBimberg, Dieter
dc.date.accessioned2022-01-20T15:04:00Z
dc.date.available2022-01-20T15:04:00Z
dc.date.issued2008-02-14
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 92, 063116 (2008) and may be found at https://doi.org/10.1063/1.2844886.en
dc.description.abstractSystematic time-resolved measurements on neutral and charged excitonic complexes (𝑋, 𝑋𝑋, 𝑋+, and 𝑋𝑋+) of 26 different single InAs∕GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 deviating from the theoretically predicted value of 2. A ratio of 1.5 for the positively charged exciton and biexciton decay time is predicted and exactly matched by the measured ratio indicating identical specific transition times for the transition channels involved.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.description.sponsorshipEC/FP6/500101/EU/Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics/SANDIEen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16181
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14955
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otheroscillator strengthsen
dc.subject.otherexcitonsen
dc.subject.otherchemical elementsen
dc.subject.otherdark statesen
dc.subject.otherselection ruleen
dc.subject.otherquantum dotsen
dc.subject.otherlensesen
dc.subject.othersemiconductorsen
dc.subject.otherdegenerate energy levelsen
dc.subject.otherradioactive decayen
dc.titleDecay dynamics of neutral and charged excitonic complexes in single InAs∕GaAs quantum dotsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber063116en
dcterms.bibliographicCitation.doi10.1063/1.2844886en
dcterms.bibliographicCitation.issue6en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume92en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
feucker_etal_2008.pdf
Size:
591.42 KB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Publications