Thin-film flip-chip UVB LEDs realized by electrochemical etching

dc.contributor.authorBergmann, Michael A.
dc.contributor.authorEnslin, Johannes
dc.contributor.authorHjort, Filip
dc.contributor.authorWernicke, Tim
dc.contributor.authorKneissl, Michael
dc.contributor.authorHaglund, Åsa
dc.date.accessioned2020-05-28T09:30:02Z
dc.date.available2020-05-28T09:30:02Z
dc.date.issued2020-03-24
dc.description.abstractWe demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0.37Ga0.63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/11241
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-10129
dc.language.isoen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc530 Physikde
dc.subject.otherultraviolet lighten
dc.subject.otheretchingen
dc.subject.otherelectroluminescenceen
dc.subject.otherepitaxyen
dc.subject.otherlight emitting diodesen
dc.subject.otherelectrochemistryen
dc.subject.otherflip chipen
dc.subject.othernitridesen
dc.subject.otherthin film devicesen
dc.subject.othersemiconductorsen
dc.titleThin-film flip-chip UVB LEDs realized by electrochemical etchingen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber121101
dcterms.bibliographicCitation.doi10.1063/1.5143297
dcterms.bibliographicCitation.issue12
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume116
tub.accessrights.dnbfree
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Experimentelle Nanophysik und Photonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinde

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