Thin-film flip-chip UVB LEDs realized by electrochemical etching
dc.contributor.author | Bergmann, Michael A. | |
dc.contributor.author | Enslin, Johannes | |
dc.contributor.author | Hjort, Filip | |
dc.contributor.author | Wernicke, Tim | |
dc.contributor.author | Kneissl, Michael | |
dc.contributor.author | Haglund, Åsa | |
dc.date.accessioned | 2020-05-28T09:30:02Z | |
dc.date.available | 2020-05-28T09:30:02Z | |
dc.date.issued | 2020-03-24 | |
dc.description.abstract | We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0.37Ga0.63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs. | en |
dc.description.sponsorship | DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente | en |
dc.identifier.eissn | 1077-3118 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/11241 | |
dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-10129 | |
dc.language.iso | en | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.subject.ddc | 530 Physik | de |
dc.subject.other | ultraviolet light | en |
dc.subject.other | etching | en |
dc.subject.other | electroluminescence | en |
dc.subject.other | epitaxy | en |
dc.subject.other | light emitting diodes | en |
dc.subject.other | electrochemistry | en |
dc.subject.other | flip chip | en |
dc.subject.other | nitrides | en |
dc.subject.other | thin film devices | en |
dc.subject.other | semiconductors | en |
dc.title | Thin-film flip-chip UVB LEDs realized by electrochemical etching | en |
dc.type | Article | en |
dc.type.version | publishedVersion | en |
dcterms.bibliographicCitation.articlenumber | 121101 | |
dcterms.bibliographicCitation.doi | 10.1063/1.5143297 | |
dcterms.bibliographicCitation.issue | 12 | |
dcterms.bibliographicCitation.journaltitle | Applied Physics Letters | en |
dcterms.bibliographicCitation.originalpublishername | American Institute of Physics (AIP) | en |
dcterms.bibliographicCitation.originalpublisherplace | Melville, NY | en |
dcterms.bibliographicCitation.volume | 116 | |
tub.accessrights.dnb | free | |
tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonik | de |
tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
tub.affiliation.group | FG Experimentelle Nanophysik und Photonik | de |
tub.affiliation.institute | Inst. Festkörperphysik | de |
tub.publisher.universityorinstitution | Technische Universität Berlin | de |
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