30 GHz bandwidth temperature stable 980 nm vertical-cavity surface-emitting lasers with AlAs/GaAs bottom distributed Bragg reflectors for optical data communication

dc.contributor.authorGębski, M.
dc.contributor.authorWong, P.-S.
dc.contributor.authorRiaziat, M.
dc.contributor.authorLott, James A.
dc.date.accessioned2022-02-08T08:24:27Z
dc.date.available2022-02-08T08:24:27Z
dc.date.issued2020-07-01
dc.date.updated2022-02-03T00:59:33Z
dc.description.abstractWe present a 980 nm vertical-cavity surface-emitting laser (VCSEL) design which achieves 32 GHz small-signal modulation bandwidth (f3db) at 15 °C and record-high 27 GHz at 85 °C. Our devices utilize binary AlAs/GaAs bottom distributed Bragg reflector material layers to improve thermal conductance. We extract key VCSEL figures-of-merit from static optical output power-current-voltage (LIV), spectral emission, and high frequency dynamic measurements and observe highly temperature stable performance for these parameters.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn2515-7647
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16312
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-15087
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc530 Physikde
dc.subject.othervertical-cavity surface-emitting lasersen
dc.subject.otheroptical interconnectsen
dc.subject.otheroptical data communicationen
dc.title30 GHz bandwidth temperature stable 980 nm vertical-cavity surface-emitting lasers with AlAs/GaAs bottom distributed Bragg reflectors for optical data communicationen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber035008en
dcterms.bibliographicCitation.doi10.1088/2515-7647/ab9420en
dcterms.bibliographicCitation.issue3en
dcterms.bibliographicCitation.journaltitleJournal of Physics: Photonicsen
dcterms.bibliographicCitation.originalpublishernameIOPen
dcterms.bibliographicCitation.originalpublisherplaceBristolen
dcterms.bibliographicCitation.volume2en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften>Inst. Festkörperphysik>AG Halbleiter Nanophononik und Nanophotonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupAG Halbleiter Nanophononik und Nanophotonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen
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