Suppression of the quantum-confined Stark effect in polar nitride heterostructures

dc.contributor.authorSchlichting, Sarah
dc.contributor.authorHönig, Gerald Martin Otto
dc.contributor.authorMüßener, Jan
dc.contributor.authorHille, Pascal
dc.contributor.authorGrieb, Tim
dc.contributor.authorWesterkamp, Steffen
dc.contributor.authorTeubert, Jörg
dc.contributor.authorSchörmann, Jörg
dc.contributor.authorWagner, Markus R.
dc.contributor.authorRosenauer, Andreas
dc.contributor.authorEickhoff, Martin
dc.contributor.authorHoffmann, Axel
dc.contributor.authorCallsen, Gordon
dc.date.accessioned2020-03-16T07:55:24Z
dc.date.available2020-03-16T07:55:24Z
dc.date.issued2018-08-23
dc.description.abstractRecently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design “IFGARD”) for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppression of the Stark redshift on the order of electronvolt and spatial charge carrier separation is independent of the specific polar semiconductor material or the related growth procedures. In this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the quantum-confined Stark effect in strongly polar [000-1] wurtzite GaN/AlN nanodiscs as evidenced by a reduction of the exciton lifetimes by up to four orders of magnitude. Furthermore, the tapered geometry of the utilized nanowires (which embed the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement and Stark emission energy shifts. Due to the IFGARD, both effects become independently adaptable.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn2399-3650
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/10928
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-9821
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc530 Physikde
dc.subject.otherinternal-field-guarded-active-region designen
dc.subject.otherStark effecten
dc.subject.othersemiconductoren
dc.subject.otherelectric fielden
dc.subject.otherguard layeren
dc.titleSuppression of the quantum-confined Stark effect in polar nitride heterostructuresen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber48en
dcterms.bibliographicCitation.doi10.1038/s42005-018-0044-1en
dcterms.bibliographicCitation.journaltitleCommunications Physicsen
dcterms.bibliographicCitation.originalpublishernameSpringer Natureen
dcterms.bibliographicCitation.originalpublisherplaceLondonen
dcterms.bibliographicCitation.volume1en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften>Inst. Festkörperphysik>FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen
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