Octave bandwidth S- and C-band GaN-HEMT power amplifiers for future 5G communication

dc.contributor.authorRautschke, Felix
dc.contributor.authorMay, Stefan
dc.contributor.authorDrews, Sebastian
dc.contributor.authorMaaßen, Daniel
dc.contributor.authorBöck, Georg
dc.date.accessioned2019-03-07T13:58:42Z
dc.date.available2019-03-07T13:58:42Z
dc.date.issued2018-06-21
dc.descriptionDieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.de
dc.descriptionThis publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.en
dc.description.abstractIn this contribution, a design methodology for octave-bandwidth power amplifiers (PA) for 5G communication systems using surface mount dual-flat-no-lead packaged gallium-nitride high-electron-mobility transistor devices is presented. Systematic source- and load-pull simulations have been used to find the optimum impedances across 75% fractional bandwidth for S- (1.9–4.2 GHz) and C-band (3.8–8.4 GHz) PAs. The harmonic impact is considered to improve the output power and efficiency of the PAs. Utilizing the characteristic behavior of the transistors leads to modified optimum fundamental load impedances for the low-frequency range, which have higher gain compared with high-frequency range, and minimize the influence of the higher harmonics. Continuous wave large-signal measurements of the realized S-Band PA show a power added efficiency (PAE) of more than 40% from 1.9–4.2 GHz and a flat power gain of 11 dB while achieving a saturated output power of 10 W. The measured performance of the C-Band PA demonstrates a delivered power between 3.5 and 5 W across the frequency range of 3.8–8.4 GHz. A flat power gain of around 9 ± 0.5 dB with 26–40% PAE is achieved.en
dc.identifier.eissn1759-0795
dc.identifier.issn1759-0787
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/9209
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-8292
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeitende
dc.subject.other5Gen
dc.subject.otheractive circuitsen
dc.subject.otherpower amplifiersen
dc.titleOctave bandwidth S- and C-band GaN-HEMT power amplifiers for future 5G communicationen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1017/S1759078718000922en
dcterms.bibliographicCitation.issue5-6en
dcterms.bibliographicCitation.journaltitleInternational Journal of Microwave and Wireless Technologiesen
dcterms.bibliographicCitation.originalpublishernameCambridge University Pressen
dcterms.bibliographicCitation.originalpublisherplaceCambridgeen
dcterms.bibliographicCitation.pageend743en
dcterms.bibliographicCitation.pagestart737en
dcterms.bibliographicCitation.volume10en
tub.accessrights.dnbfreeen
tub.affiliationFak. 4 Elektrotechnik und Informatik>Inst. Hochfrequenz- und Halbleiter-Systemtechnologien>FG Mikrowellentechnikde
tub.affiliation.facultyFak. 4 Elektrotechnik und Informatikde
tub.affiliation.groupFG Mikrowellentechnikde
tub.affiliation.instituteInst. Hochfrequenz- und Halbleiter-Systemtechnologiende
tub.publisher.universityorinstitutionTechnische Universität Berlinen
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