Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
| dc.contributor.author | Cho, Hyun Kyong | |
| dc.contributor.author | Mogilatenko, A. | |
| dc.contributor.author | Susilo, Norman | |
| dc.contributor.author | Ostermay, I. | |
| dc.contributor.author | Seifert, S. | |
| dc.contributor.author | Wernicke, T. | |
| dc.contributor.author | Kneissl, Michael | |
| dc.contributor.author | Einfeldt, Sven | |
| dc.date.accessioned | 2022-09-12T08:01:54Z | |
| dc.date.available | 2022-09-12T08:01:54Z | |
| dc.date.issued | 2022-09-09 | |
| dc.date.updated | 2022-09-11T02:47:25Z | |
| dc.description.abstract | We investigated the formation of ohmic contacts as a result of intermetallic phase formation between V, Al, Ni, and Au in V/Al/Ni/Au metal stacks on n-Al0.65Ga0.35N:Si. In particular, the influence of Au metal thickness and annealing temperature was analysed. The lowest annealing temperature of 750 °C for an ohmic contact with a smooth surface and a contact resistivity of about 2.4 × 10−5 Ωcm2 was achieved for V(15 nm)/Al(120 nm)/Ni(20 nm)/Au(40 nm). The lowest contact resistivity is accompanied by formation of two thin interfacial regions consisting of AlN and an Au-rich phase. We suggest that not only the formation of thin interfacial AlN layer is important for a low contact resistance, but also the formation of the Au-rich interface can have a favourable effect on the contact properties. | en |
| dc.description.sponsorship | BMBF, 03ZZ0134B, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: UV Power; TP2: Entwicklung von high-power UVB-LEDs um 300 nm | en |
| dc.description.sponsorship | BMBF, 03ZZ0134C, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: UV Power; TP3: Epitaxieentwicklung für high-power UVC-LEDs um 260 nm | en |
| dc.identifier.eissn | 1361-6641 | |
| dc.identifier.issn | 0268-1242 | |
| dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/17408 | |
| dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-16189 | |
| dc.language.iso | en | en |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en |
| dc.subject.ddc | 530 Physik | de |
| dc.subject.other | ohmic contact | en |
| dc.subject.other | n-AlGaN | en |
| dc.subject.other | high Al mole fraction | en |
| dc.subject.other | UV LED | en |
| dc.subject.other | Au rich phase | en |
| dc.subject.other | AlN | en |
| dc.title | Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures | en |
| dc.type | Article | en |
| dc.type.version | publishedVersion | en |
| dcterms.bibliographicCitation.articlenumber | 105016 | en |
| dcterms.bibliographicCitation.doi | 10.1088/1361-6641/ac8e8f | en |
| dcterms.bibliographicCitation.issue | 10 | en |
| dcterms.bibliographicCitation.journaltitle | Semiconductor Science and Technology | en |
| dcterms.bibliographicCitation.originalpublishername | IOP | en |
| dcterms.bibliographicCitation.originalpublisherplace | Bristol | en |
| dcterms.bibliographicCitation.volume | 37 | en |
| tub.accessrights.dnb | free | en |
| tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonik | de |
| tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
| tub.affiliation.group | FG Experimentelle Nanophysik und Photonik | de |
| tub.affiliation.institute | Inst. Festkörperphysik | de |
| tub.publisher.universityorinstitution | Technische Universität Berlin | en |