Controlling the gain contribution of background emitters in few-quantum-dot microlasers

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dc.contributor.authorGericke, F.
dc.contributor.authorSegnon, M.
dc.contributor.authorvon Helversen, M.
dc.contributor.authorHopfmann, C.
dc.contributor.authorHeindel, T.
dc.contributor.authorSchneider, C.
dc.contributor.authorHöfling, S.
dc.contributor.authorKamp, M.
dc.contributor.authorMusiał, A.
dc.contributor.authorPorte, X.
dc.contributor.authorGies, C.
dc.contributor.authorReitzenstein, Stephan
dc.date.accessioned2022-02-17T10:56:59Z
dc.date.available2022-02-17T10:56:59Z
dc.date.issued2018-02-15
dc.date.updated2022-02-11T09:22:41Z
dc.description.abstractWe provide experimental and theoretical insight into single-emitter lasing effects in a quantum dot (QD)-microlaser under controlled variation of background gain provided by off-resonant discrete gain centers. For that purpose, we apply an advanced two-color excitation concept where the background gain contribution of off-resonant QDs can be continuously tuned by precisely balancing the relative excitation power of two lasers emitting at different wavelengths. In this way, by selectively exciting a single resonant QD and off-resonant QDs, we identify distinct single-QD signatures in the lasing characteristics and distinguish between gain contributions of a single resonant emitter and a countable number of off-resonant background emitters to the optical output of the microlaser. Our work addresses the important question whether single-QD lasing is feasible in experimentally accessible systems and shows that, for the investigated microlaser, the single-QD gain needs to be supported by the background gain contribution of off-resonant QDs to reach the transition to lasing. Interestingly, while a single QD cannot drive the investigated micropillar into lasing, its relative contribution to the emission can be as high as 70% and it dominates the statistics of emitted photons in the intermediate excitation regime below threshold.en
dc.description.sponsorshipEC/FP7/615613/EU/External Quantum Control of Photonic Semiconductor Nanostructures/EXQUISITEen
dc.identifier.eissn1367-2630
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16428
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-15204
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/en
dc.subject.ddc530 Physikde
dc.subject.othernanolasersen
dc.subject.othercavity QEDen
dc.subject.otherhigh-β lasingen
dc.subject.otherquantum dot–micropillar cavitiesen
dc.subject.othersingle quantum dot laseren
dc.subject.othersemiconductor laseren
dc.titleControlling the gain contribution of background emitters in few-quantum-dot microlasersen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber023036en
dcterms.bibliographicCitation.doi10.1088/1367-2630/aaa477en
dcterms.bibliographicCitation.issue2en
dcterms.bibliographicCitation.journaltitleNew Journal of Physicsen
dcterms.bibliographicCitation.originalpublishernameIOPen
dcterms.bibliographicCitation.originalpublisherplaceBristolen
dcterms.bibliographicCitation.volume20en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::AG Optoelektronik und Quantenbauelementede
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupAG Optoelektronik und Quantenbauelementede
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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