Analytical approach to modulation properties of quantum dot lasers

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dc.contributor.authorLüdge, Kathy
dc.contributor.authorSchöll, Eckehard
dc.contributor.authorViktorov, Evgeny
dc.contributor.authorErneux, Thomas
dc.date.accessioned2022-01-06T20:18:57Z
dc.date.available2022-01-06T20:18:57Z
dc.date.issued2011-05-20
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 109, 103112 (2011) and may be found at https://doi.org/10.1063/1.3587244.en
dc.description.abstractWe analyze a microscopically based rate equation model for quantum dot lasers. The model separately treats the dynamics of electrons and holes, and the carrier-carrier scattering rates depend nonlinearly on the wetting layer carrier densities. Our objective is to determine analytical expressions for the relaxation oscillation frequency and damping rate. To this end, we consider the Class B limit of the five rate equations and apply asymptotic techniques. We consider two cases corresponding to either equivalent or drastically different decay rates for the electrons and holes. We show how they contribute to increase the relaxation oscillation damping rate compared to the damping rate of the conventional laser and that there exist optimal conditions on the control parameters in order to observe maximum damping.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16084
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14858
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.othersemiconductor laseren
dc.subject.othernonlinear dynamicsen
dc.subject.otherhigh speeden
dc.subject.othersensitivityen
dc.subject.otherdependenceen
dc.subject.othergainen
dc.subject.otherchemical reactionsen
dc.subject.otherscatteringen
dc.subject.othermatrix calculusen
dc.subject.otherrelaxation oscillationsen
dc.subject.otherapproximation methodsen
dc.subject.othercomplex analysisen
dc.subject.otherlasersen
dc.subject.otherelectron captureen
dc.titleAnalytical approach to modulation properties of quantum dot lasersen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber103112en
dcterms.bibliographicCitation.doi10.1063/1.3587244en
dcterms.bibliographicCitation.issue10en
dcterms.bibliographicCitation.journaltitleJournal of Applied Physicsen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume109en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Theoretische Physik::FG Nichtlineare Dynamik und Kontrollede
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Nichtlineare Dynamik und Kontrollede
tub.affiliation.instituteInst. Theoretische Physikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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