Fast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dots

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dc.contributor.authorHerzog, Bastian
dc.contributor.authorOwschimikow, Nina
dc.contributor.authorSchulze, Jan-Hindrik
dc.contributor.authorRosales, Ricardo
dc.contributor.authorKaptan, Yücel
dc.contributor.authorKolarczik, Mirco
dc.contributor.authorSwitaiski, Thomas
dc.contributor.authorStrittmatter, André
dc.contributor.authorBimberg, Dieter
dc.contributor.authorPohl, Udo W.
dc.contributor.authorWoggon, Ulrike
dc.date.accessioned2022-01-07T10:38:39Z
dc.date.available2022-01-07T10:38:39Z
dc.date.issued2015-11-16
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 107, 201102 (2015) and may be found at https://doi.org/10.1063/1.4935792.en
dc.description.abstractSubmonolayer quantum dots as active medium in opto-electronic devices promise to combine the high density of states of quantum wells with the fast recovery dynamics of self-assembled quantum dots. We investigate the gain and phase recovery dynamics of a semiconductor optical amplifier based on InAs submonolayer quantum dots in the regime of linear operation by one- and two-color heterodyne pump-probe spectroscopy. We find an as fast recovery dynamics as for quantum dot-in-a-well structures, reaching 2 ps at moderate injection currents. The effective quantum well embedding the submonolayer quantum dots acts as a fast and efficient carrier reservoir.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.description.sponsorshipDFG, 87159868, GRK 1558: Kollektive Dynamik im Nichtgleichgewicht: in kondensierter Materie und biologischen Systemenen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16098
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14872
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherpump probe spectroscopyen
dc.subject.othertelecommunicationsen
dc.subject.otherquantum wellsen
dc.subject.othersignal processing methoden
dc.subject.otheroptoelectronic devicesen
dc.subject.otherelectrical properties and parametersen
dc.subject.othersemiconductor optical amplifiersen
dc.subject.otherquantum dotsen
dc.subject.otherelectroluminescenceen
dc.subject.otherlasersen
dc.titleFast gain and phase recovery of semiconductor optical amplifiers based on submonolayer quantum dotsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber201102en
dcterms.bibliographicCitation.doi10.1063/1.4935792en
dcterms.bibliographicCitation.issue20en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume107en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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