On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

dc.contributor.authorSteindl, Petr
dc.contributor.authorSala, Elisa Maddalena
dc.contributor.authorAlén, Benito
dc.contributor.authorBimberg, Dieter
dc.contributor.authorKlenovský, Petr
dc.date.accessioned2022-02-17T15:30:12Z
dc.date.available2022-02-17T15:30:12Z
dc.date.issued2021-10-21
dc.date.updated2022-02-11T21:20:58Z
dc.description.abstractUnderstanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and the GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. Moreover, based on the considerable tunability of the QDs depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor platforms, due to the feasibility of a nearly defect-free growth of GaP on Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction spatial distribution.en
dc.description.sponsorshipEC/H2020/862035/EU/Many-photon quantum entanglement/QLUSTERen
dc.description.sponsorshipEC/H2020/731473/EU/QuantERA ERA-NET Cofund in Quantum Technologies/QuantERAen
dc.description.sponsorshipEC/H2020/956548/EU/Quantum Semiconductor Technologies Exploiting Antimony/QUANTIMONYen
dc.identifier.eissn1367-2630
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16440
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-15216
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc530 Physikde
dc.subject.otherIII–V semiconductorsen
dc.subject.otherquantum dotsen
dc.subject.otherphotoluminescenceen
dc.subject.othercarrier dynamicsen
dc.subject.otherlifetimesen
dc.titleOn the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)en
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber103029en
dcterms.bibliographicCitation.doi10.1088/1367-2630/ac2bd6en
dcterms.bibliographicCitation.issue10en
dcterms.bibliographicCitation.journaltitleNew Journal of Physicsen
dcterms.bibliographicCitation.originalpublishernameIOPen
dcterms.bibliographicCitation.originalpublisherplaceBristolen
dcterms.bibliographicCitation.volume23en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::AG Halbleiter Nanophononik und Nanophotonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupAG Halbleiter Nanophononik und Nanophotonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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