Beam Profile Characterisation of an Optoelectronic Silicon Lens-Integrated PIN-PD Emitter between 100 GHz and 1 THz
Knowledge of the beam profiles of terahertz emitters is required for the design of terahertz instruments and applications, and in particular for designing terahertz communications links. We report measurements of beam profiles of an optoelectronic silicon lens-integrated PIN-PD emitter at frequencies between 100 GHz and 1 THz and observe significant deviations from a Gaussian beam profile. The beam profiles were found to differ between the H-plane and the E-plane, and to vary strongly with the emitted frequency. Skewed profiles and irregular side-lobes were observed. Metrological aspects of beam profile measurements are discussed and addressed.
Published in: Applied Sciences, 10.3390/app11020465, MDPI