Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
| dc.contributor.author | Guttmann, Martin | |
| dc.contributor.author | Susilo, Anna | |
| dc.contributor.author | Sulmoni, Luca | |
| dc.contributor.author | Susilo, Norman | |
| dc.contributor.author | Ziffer, Eviathar | |
| dc.contributor.author | Wernicke, Tim | |
| dc.contributor.author | Kneissl, Michael | |
| dc.date.accessioned | 2022-02-03T15:12:50Z | |
| dc.date.available | 2022-02-03T15:12:50Z | |
| dc.date.issued | 2021-06-04 | |
| dc.date.updated | 2022-02-01T12:30:13Z | |
| dc.description.abstract | The light extraction efficiency (LEE), external quantum efficiency (EQE), and current–voltage characteristics of deep ultraviolet light emitting diodes (DUV-LEDs) with different aluminum mole fractions in the p-AlGaN layers have been investigated. Optimizing the p-AlGaN layer composition requires a tradeoff between reducing the absorption losses and limiting the increases in the p-contact resistance and operation voltage. AlGaN multiple quantum well LEDs emitting around 263 nm with different AlGaN:Mg short period super lattices (p-SPSL) ranging from x = 33% (UV-absorbing) to x = 68% (UV-transparent) average aluminum mole fraction have been explored. DUV-LEDs with different p-contact metals and UV-reflectivities have been characterized by electroluminescence measurements and analyzed by ray-tracing simulations. The comparison shows an increased operating voltage and a five-fold increase of the on-wafer EQE with a maximum value of 3.0% for DUV-LEDs with UV-transparent p-SPSL (x = 68%) and UV-reflective indium contacts in comparison to LEDs with a UV-absorbing p-SPSL (x = 33%). Ray-tracing simulations show that the increase in EQE can be partially ascribed to a 2.5-fold improved LEE in combination with a two-fold increase in internal quantum efficiency. | en |
| dc.description.sponsorship | DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente | en |
| dc.identifier.eissn | 1361-6463 | |
| dc.identifier.issn | 0022-3727 | |
| dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/16291 | |
| dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-15066 | |
| dc.language.iso | en | en |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en |
| dc.subject.ddc | 530 Physik | de |
| dc.subject.other | deep UV LED | en |
| dc.subject.other | AlGaN | en |
| dc.subject.other | reflective contact | en |
| dc.subject.other | ray-tracing simulation | en |
| dc.subject.other | light extraction efficiency | en |
| dc.title | Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs | en |
| dc.type | Article | en |
| dc.type.version | publishedVersion | en |
| dcterms.bibliographicCitation.articlenumber | 335101 | en |
| dcterms.bibliographicCitation.doi | 10.1088/1361-6463/ac021a | en |
| dcterms.bibliographicCitation.issue | 33 | en |
| dcterms.bibliographicCitation.journaltitle | Journal of Physics D: Applied Physics | en |
| dcterms.bibliographicCitation.originalpublishername | IOP | en |
| dcterms.bibliographicCitation.originalpublisherplace | Bristol | en |
| dcterms.bibliographicCitation.volume | 54 | en |
| tub.accessrights.dnb | free | en |
| tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonik | de |
| tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
| tub.affiliation.group | FG Experimentelle Nanophysik und Photonik | de |
| tub.affiliation.institute | Inst. Festkörperphysik | de |
| tub.publisher.universityorinstitution | Technische Universität Berlin | en |