Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers

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dc.contributor.authorEnslin, Johannes
dc.contributor.authorKnauer, Arne
dc.contributor.authorMogilatenko, Anna
dc.contributor.authorMehnke, Frank
dc.contributor.authorMartens, Martin
dc.contributor.authorKuhn, Christian
dc.contributor.authorWernicke, Tim
dc.contributor.authorWeyers, Markus
dc.contributor.authorKneissl, Michael
dc.date.accessioned2020-02-13T13:47:05Z
dc.date.available2020-02-13T13:47:05Z
dc.date.issued2019-11-12
dc.description.abstractHerein, a systematic study of the morphology and local defect distribution in epitaxially laterally overgrown (ELO) AlN on c‐plane sapphire substrates with different off‐cut angles ranging from 0.08° to 0.23° is presented. Precise measurements of the off‐cut angle α, using a combination of optical alignment and X‐ray diffraction with an accuracy of ±5° for the off‐cut direction and ±0.015° for the off‐cut angle, are carried out. For ELO AlN growth, a transition from step flow growth at α < 0.14° with height undulations on the surface to step bunching with step heights up to 20 nm for α > 0.14° is observed. Furthermore, the terraces of the step‐bunched surface exhibit curved steps. An analysis of the local defect distribution by scanning transmission electron microscopy and a comparison with atomic force microscopy reveal a bunching of defects in line with the ELO pattern and a roughening of step edges in highly defective regions. In addition, a reduction in the threshold excitation power density for optically pumped ultraviolet‐C (UVC) lasers with smooth surface morphologies is observed.en
dc.description.sponsorshipTU Berlin, Open-Access-Mittel - 2019en
dc.identifier.eissn1862-6319
dc.identifier.issn1862-6300
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/10753
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-9648
dc.language.isoen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject.ddc530 Physiken
dc.subject.otherAlNen
dc.subject.otherepitaxially laterally overgrownen
dc.subject.otheroff-cuten
dc.subject.otheroptically pumped lasersen
dc.subject.othersapphiresen
dc.subject.otherUVCen
dc.titleDetermination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasersen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber1900682
dcterms.bibliographicCitation.doi10.1002/pssa.201900682
dcterms.bibliographicCitation.issue24
dcterms.bibliographicCitation.journaltitlephysica status solidi (a)en
dcterms.bibliographicCitation.originalpublishernameWileyen
dcterms.bibliographicCitation.originalpublisherplaceWeinheimen
dcterms.bibliographicCitation.volume216
tub.accessrights.dnbfree
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Experimentelle Nanophysik und Photonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinde

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