A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laser

dc.contributor.authorHjort, Filip
dc.contributor.authorEnslin, Johannes
dc.contributor.authorCobet, Munise
dc.contributor.authorBergmann, Michael A.
dc.contributor.authorGustavsson, Johan
dc.contributor.authorKolbe, Tim
dc.contributor.authorKnauer, Arne
dc.contributor.authorNippert, Felix
dc.contributor.authorHäusler, Ines
dc.contributor.authorWagner, Markus R.
dc.contributor.authorWernicke, Tim
dc.contributor.authorKneissl, Michael
dc.contributor.authorHaglund, Åsa
dc.date.accessioned2021-03-31T07:52:48Z
dc.date.available2021-03-31T07:52:48Z
dc.date.issued2020-12-17
dc.description.abstractUltraviolet light is essential for disinfection, fluorescence excitation, curing, and medical treatment. An ultraviolet light source with the small footprint and excellent optical characteristics of vertical-cavity surface-emitting lasers (VCSELs) may enable new applications in all these areas. Until now, there have only been a few demonstrations of ultraviolet-emitting VCSELs, mainly optically pumped, and all with low Al-content AlGaN cavities and emission near the bandgap of GaN (360 nm). Here, we demonstrate an optically pumped VCSEL emitting in the UVB spectrum (280–320 nm) at room temperature, having an Al0.60Ga0.40N cavity between two dielectric distributed Bragg reflectors. The double dielectric distributed Bragg reflector design was realized by substrate removal using electrochemical etching. Our method is further extendable to even shorter wavelengths, which would establish a technology that enables VCSEL emission from UVA (320–400 nm) to UVC (<280 nm).en
dc.description.sponsorshipEC/H2020/865622/EU/Out of the blue: membrane-based microcavity lasers from the blue to the ultraviolet wavelength regime/UV-LASEen
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.description.sponsorshipDFG, 324666853, Berliner Netzwerk für Elektronenmikroskopie - Elektronenholographie an Nanoskaligen Halbleiterstrukturenen
dc.identifier.eissn2330-4022
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/12914
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-11715
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeitende
dc.subject.otheretchingen
dc.subject.otherlayersen
dc.subject.otherpoweren
dc.subject.othercavitiesen
dc.subject.otherlasersen
dc.titleA 310 nm optically pumped AlGaN vertical-cavity surface-emitting laseren
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1021/acsphotonics.0c01382en
dcterms.bibliographicCitation.issue1en
dcterms.bibliographicCitation.journaltitleACS Photonicsen
dcterms.bibliographicCitation.originalpublishernameAmerican Chemical Society (ACS)en
dcterms.bibliographicCitation.originalpublisherplaceWashington, DCen
dcterms.bibliographicCitation.pageend141en
dcterms.bibliographicCitation.pagestart135en
dcterms.bibliographicCitation.volume8en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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