High frequency operation of an integrated electro-absorption modulator onto a vertical-cavity surface-emitting laser

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dc.contributor.authorMarigo-Lombart, Ludovic
dc.contributor.authorRumeau, A.
dc.contributor.authorViallon, Christophe
dc.contributor.authorArnoult, A.
dc.contributor.authorCalvez, Stephane
dc.contributor.authorMonmayrant, A.
dc.contributor.authorGauthier-Lafaye, O.
dc.contributor.authorRosales, R.
dc.contributor.authorLott, James A.
dc.contributor.authorThienpont, Hugo
dc.contributor.authorPanajotov, Krassimir
dc.contributor.authorAlmuneau, Guilhem
dc.date.accessioned2022-02-08T08:19:51Z
dc.date.available2022-02-08T08:19:51Z
dc.date.issued2019-01-15
dc.date.updated2022-02-03T00:29:31Z
dc.description.abstractWe present in this paper the vertical integration of an electro-absorption modulator (EAM) onto a vertical-cavity surface-emitting laser (VCSEL). We discuss the design, fabrication, and measured characteristics of the combined VCSEL and EAM. We previously demonstrated a standalone EAM with an optical bandwidth around 30 GHz. In this paper we present for the first time an optical bandwidth of 30 GHz for an EAM integrated onto a VCSEL. This device exhibits single-mode operation and a very low chirp, below 0.1 nm, even with a modulation depth of 70% which makes this device very competitive for high-speed communications in data centers.en
dc.identifier.eissn2515-7647
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16311
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-15086
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/3.0/en
dc.subject.ddc530 Physikde
dc.subject.othervertical cavity surface emitting lasersen
dc.subject.othermodulatoren
dc.subject.otherhigh frequency characterizationen
dc.titleHigh frequency operation of an integrated electro-absorption modulator onto a vertical-cavity surface-emitting laseren
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber02LT01en
dcterms.bibliographicCitation.doi10.1088/2515-7647/aaf5afen
dcterms.bibliographicCitation.issue2en
dcterms.bibliographicCitation.journaltitleJournal of Physics: Photonicsen
dcterms.bibliographicCitation.originalpublishernameIOPen
dcterms.bibliographicCitation.originalpublisherplaceBristolen
dcterms.bibliographicCitation.volume1en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::AG Halbleiter Nanophononik und Nanophotonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupAG Halbleiter Nanophononik und Nanophotonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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