Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement

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dc.contributor.authorVaccaro, Pablo
dc.contributor.authorAlonso, Maria Isabel
dc.contributor.authorGarriga, M.
dc.contributor.authorGutiérrez, Joffre
dc.contributor.authorPeró, D.
dc.contributor.authorWagner, Markus R.
dc.contributor.authorReparaz, J. S.
dc.contributor.authorSotomayor Torres, C. M.
dc.contributor.authorVidal, Xavier
dc.contributor.authorCarter, E. A.
dc.contributor.authorLay, P. A.
dc.contributor.authorYoshimoto, M.
dc.contributor.authorGoñi, Alejandro R.
dc.date.accessioned2020-02-25T16:27:29Z
dc.date.available2020-02-25T16:27:29Z
dc.date.issued2018-11-28
dc.description.abstractWe deposited Ge layers on (001) Si substrates by molecular beam epitaxy and used them to fabricate suspended membranes with high uniaxial tensile strain. We demonstrate a CMOS-compatible fabrication strategy to increase strain concentration and to eliminate the Ge buffer layer near the Ge/Si hetero-interface deposited at low temperature. This is achieved by a two-steps patterning and selective etching process. First, a bridge and neck shape is patterned in the Ge membrane, then the neck is thinned from both top and bottom sides. Uniaxial tensile strain values higher than 3% were measured by Raman scattering in a Ge membrane of 76 nm thickness. For the challenging thickness measurement on micrometer-size membranes suspended far away from the substrate a characterization method based on pump-and-probe reflectivity measurements was applied, using an asynchronous optical sampling technique.en
dc.description.sponsorshipEC/FP7/628197/EU/Heat Propagation and Thermal Conductivity in Nanomaterials for Nanoscale Energy Management/HEATPRONANOen
dc.identifier.eissn2158-3226
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/10834
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-9729
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc530 Physikde
dc.subject.othergermaniumen
dc.subject.othersilicon substratesen
dc.subject.otherGe membraneen
dc.subject.othermembrane thicknessen
dc.titleLocalized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurementen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber115131en
dcterms.bibliographicCitation.doi10.1063/1.5050674en
dcterms.bibliographicCitation.issue11en
dcterms.bibliographicCitation.journaltitleAIP Advancesen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume8en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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