Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
dc.contributor.author | Choi, Sumin | |
dc.contributor.author | Rogers, David J. | |
dc.contributor.author | Sandana, Eric V. | |
dc.contributor.author | Bove, Philippe | |
dc.contributor.author | Teherani, Ferechteh H. | |
dc.contributor.author | Nenstiel, Christian | |
dc.contributor.author | Hoffmann, Axel | |
dc.contributor.author | McClintock, Ryan | |
dc.contributor.author | Razeghi, Manijeh | |
dc.contributor.author | Look, David | |
dc.contributor.author | Gentle, Angus | |
dc.contributor.author | Phillips, Matthew R. | |
dc.contributor.author | Ton-That, Cuong | |
dc.date.accessioned | 2020-11-19T09:32:54Z | |
dc.date.available | 2020-11-19T09:32:54Z | |
dc.date.issued | 2017-08-07 | |
dc.description.abstract | We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling. | en |
dc.identifier.eissn | 2045-2322 | |
dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/12022 | |
dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-10902 | |
dc.language.iso | en | en |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | |
dc.subject.ddc | 530 Physik | en |
dc.subject.other | conductivity | en |
dc.subject.other | MgZnO/ZnO heterointerface | en |
dc.subject.other | luminescence | en |
dc.subject.other | electron mobility | en |
dc.title | Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface | en |
dc.type | Article | en |
dc.type.version | publishedVersion | en |
dcterms.bibliographicCitation.articlenumber | 7457 | |
dcterms.bibliographicCitation.doi | 10.1038/s41598-017-07568-z | |
dcterms.bibliographicCitation.journaltitle | Scientific Reports | en |
dcterms.bibliographicCitation.originalpublishername | Nature Publishing Group | en |
dcterms.bibliographicCitation.originalpublisherplace | London | en |
dcterms.bibliographicCitation.volume | 7 | |
tub.accessrights.dnb | free | |
tub.affiliation | Fak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik | de |
tub.affiliation.faculty | Fak. 2 Mathematik und Naturwissenschaften | de |
tub.affiliation.institute | Inst. Festkörperphysik | de |
tub.publisher.universityorinstitution | Technische Universität Berlin | de |
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