Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities

dc.contributor.authorMuhin, Anton
dc.contributor.authorGuttmann, Martin
dc.contributor.authorMontag, Verena
dc.contributor.authorSusilo, Norman
dc.contributor.authorZiffer, Eviathar
dc.contributor.authorSulmoni, Luca
dc.contributor.authorHagedorn, Sylvia
dc.contributor.authorLobo-Ploch, Neysha
dc.contributor.authorRass, Jens
dc.contributor.authorCancellara, Leonardo
dc.contributor.authorWu, Shaojun
dc.contributor.authorWernicke, Tim
dc.contributor.authorKneissl, Michael
dc.date.accessioned2023-11-07T10:38:29Z
dc.date.available2023-11-07T10:38:29Z
dc.date.issued2022-12-08
dc.date.updated2023-10-16T08:21:40Z
dc.description.abstractThe electro-optical characteristics of deep ultraviolet light-emitting diodes (DUV LEDs) emitting at 265 nm and grown on AlN/sapphire templates with different threading dislocation densities, i.e., high-temperature annealed (HTA) AlN, epitaxially laterally overgrown (ELO) AlN, and HTA-ELO AlN are analyzed. The external quantum efficiency of each individual device is separated into maximum radiative recombination efficiency, carrier injection efficiency, and light extraction efficiency. This is achieved by combining an ABC-model-based fit of the current-dependent external quantum efficiency together with calibrated Monte Carlo ray-tracing simulations. A maximum radiative recombination efficiency between 50% and 60% is estimated for DUV LEDs grown on ELO and HTA-ELO AlN/sapphire, whereas the values for devices grown on HTA AlN/sapphire are around 45%. The extracted radiative recombination efficiency does not scale with the measured threading dislocation density (TDD), even when accounting for the inhomogeneous TDD in the AlN base layers. This discrepancy is attributed to the formation of dislocation half-loops introduced by additional compressive strain caused by the HTA process and may result in the formation of additional nonradiative recombination centers in the AlGaN multi-quantum well region. In addition, the carrier injection efficiency values ranging from 45% to 55% are determined for devices grown on all three templates.en
dc.description.sponsorshipTU Berlin, Open-Access-Mittel – 2023
dc.identifier.eissn1862-6319
dc.identifier.issn1862-6300
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/20279
dc.identifier.urihttps://doi.org/10.14279/depositonce-19077
dc.language.isoen
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.ddc500 Naturwissenschaften und Mathematik::530 Physik::530 Physik
dc.subject.othercarrier injection efficiency
dc.subject.otherepitaxial lateral overgrowths
dc.subject.otherhigh-temperature annealing
dc.subject.othermisfit dislocation
dc.subject.otherradiative recombination efficiency
dc.subject.otherthreading dislocation density
dc.subject.otherUVC
dc.titleRadiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light‐Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densitiesen
dc.typeArticle
dc.type.versionpublishedVersion
dcterms.bibliographicCitation.articlenumber2200458
dcterms.bibliographicCitation.doi10.1002/pssa.202200458
dcterms.bibliographicCitation.issue16
dcterms.bibliographicCitation.journaltitlephysica status solidi (a)en
dcterms.bibliographicCitation.originalpublishernameWiley
dcterms.bibliographicCitation.originalpublisherplaceNew York, NY
dcterms.bibliographicCitation.pageend
dcterms.bibliographicCitation.pagestart
dcterms.bibliographicCitation.volume220
dcterms.rightsHolder.referenceCreative-Commons-Lizenz
tub.accessrights.dnbfree
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonik
tub.publisher.universityorinstitutionTechnische Universität Berlin

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