Annihilation of structural defects in chalcogenide absorber films for high-efficiency solar cells
dc.contributor.author | Mainz, Roland | |
dc.contributor.author | Sanli, Ekin Simsek | |
dc.contributor.author | Stange, Helena | |
dc.contributor.author | Azulay, Doron | |
dc.contributor.author | Brunken, Stephan | |
dc.contributor.author | Greiner, Dieter | |
dc.contributor.author | Hajaj, Shir | |
dc.contributor.author | Heinemann, Marc D. | |
dc.contributor.author | Kaufmann, Christian A. | |
dc.contributor.author | Klaus, Manuela | |
dc.contributor.author | Ramasse, Quentin M. | |
dc.contributor.author | Rodriguez-Alvarez, Humberto | |
dc.contributor.author | Weber, Alfons | |
dc.contributor.author | Balberg, Isaac | |
dc.contributor.author | Millo, Oded | |
dc.contributor.author | Aken, Peter A. van | |
dc.contributor.author | Abou-Ras, Daniel | |
dc.date.accessioned | 2017-10-24T07:15:39Z | |
dc.date.available | 2017-10-24T07:15:39Z | |
dc.date.issued | 2016 | |
dc.description | Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich. | de |
dc.description | This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. | en |
dc.description.abstract | In polycrystalline semiconductor absorbers for thin-film solar cells, structural defects may enhance electron-hole recombination and hence lower the resulting energy conversion efficiency. To be able to efficiently design and optimize fabrication processes that result in high-quality materials, knowledge of the nature of structural defects as well as their formation and annihilation during film growth is essential. Here we show that in co-evaporated Cu(In,Ga)Se-2 absorber films the density of defects is strongly influenced by the reaction path and substrate temperature during film growth. A combination of high-resolution electron microscopy, atomic force microscopy, scanning tunneling microscopy, and X-ray diffraction shows that Cu(In,Ga)Se-2 absorber films deposited at low temperature without a Cu-rich stage suffer from a high density of - partially electronically active - planar defects in the {112} planes. Real-time X-ray diffraction reveals that these faults are nearly completely annihilated during an intermediate Cu-rich process stage with [Cu]/([In] + [Ga]) > 1. Moreover, correlations between real-time diffraction and fluorescence analysis during Cu-Se deposition reveal that rapid defect annihilation starts shortly before the start of segregation of excess Cu-Se at the surface of the Cu(In,Ga)Se-2 film. The presented results hence provide direct insights into the dynamics of the film-quality-improving mechanism. | en |
dc.identifier.eissn | 1754-5706 | |
dc.identifier.issn | 1754-5692 | |
dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/6906 | |
dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-6245 | |
dc.language.iso | en | |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
dc.subject.ddc | 690 Hausbau, Bauhandwerk | de |
dc.title | Annihilation of structural defects in chalcogenide absorber films for high-efficiency solar cells | en |
dc.type | Article | en |
dc.type.version | publishedVersion | en |
dcterms.bibliographicCitation.doi | 10.1039/c6ee00402d | |
dcterms.bibliographicCitation.issue | 5 | |
dcterms.bibliographicCitation.journaltitle | Energy & environmental science | en |
dcterms.bibliographicCitation.originalpublishername | Royal Society of Chemistry | de |
dcterms.bibliographicCitation.originalpublisherplace | Cambridge | de |
dcterms.bibliographicCitation.pageend | 1827 | |
dcterms.bibliographicCitation.pagestart | 1818 | |
dcterms.bibliographicCitation.volume | 9 | |
tub.accessrights.dnb | domain | |
tub.affiliation | Fak. 3 Prozesswissenschaften::Inst. Werkstoffwissenschaften und -technologien::FG Metallische Werkstoffe | de |
tub.affiliation.faculty | Fak. 3 Prozesswissenschaften | de |
tub.affiliation.group | FG Metallische Werkstoffe | de |
tub.affiliation.institute | Inst. Werkstoffwissenschaften und -technologien | de |
tub.publisher.universityorinstitution | Technische Universität Berlin |
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