Annihilation of structural defects in chalcogenide absorber films for high-efficiency solar cells

dc.contributor.authorMainz, Roland
dc.contributor.authorSanli, Ekin Simsek
dc.contributor.authorStange, Helena
dc.contributor.authorAzulay, Doron
dc.contributor.authorBrunken, Stephan
dc.contributor.authorGreiner, Dieter
dc.contributor.authorHajaj, Shir
dc.contributor.authorHeinemann, Marc D.
dc.contributor.authorKaufmann, Christian A.
dc.contributor.authorKlaus, Manuela
dc.contributor.authorRamasse, Quentin M.
dc.contributor.authorRodriguez-Alvarez, Humberto
dc.contributor.authorWeber, Alfons
dc.contributor.authorBalberg, Isaac
dc.contributor.authorMillo, Oded
dc.contributor.authorAken, Peter A. van
dc.contributor.authorAbou-Ras, Daniel
dc.date.accessioned2017-10-24T07:15:39Z
dc.date.available2017-10-24T07:15:39Z
dc.date.issued2016
dc.descriptionDieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.de
dc.descriptionThis publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.en
dc.description.abstractIn polycrystalline semiconductor absorbers for thin-film solar cells, structural defects may enhance electron-hole recombination and hence lower the resulting energy conversion efficiency. To be able to efficiently design and optimize fabrication processes that result in high-quality materials, knowledge of the nature of structural defects as well as their formation and annihilation during film growth is essential. Here we show that in co-evaporated Cu(In,Ga)Se-2 absorber films the density of defects is strongly influenced by the reaction path and substrate temperature during film growth. A combination of high-resolution electron microscopy, atomic force microscopy, scanning tunneling microscopy, and X-ray diffraction shows that Cu(In,Ga)Se-2 absorber films deposited at low temperature without a Cu-rich stage suffer from a high density of - partially electronically active - planar defects in the {112} planes. Real-time X-ray diffraction reveals that these faults are nearly completely annihilated during an intermediate Cu-rich process stage with [Cu]/([In] + [Ga]) > 1. Moreover, correlations between real-time diffraction and fluorescence analysis during Cu-Se deposition reveal that rapid defect annihilation starts shortly before the start of segregation of excess Cu-Se at the surface of the Cu(In,Ga)Se-2 film. The presented results hence provide direct insights into the dynamics of the film-quality-improving mechanism.en
dc.identifier.eissn1754-5706
dc.identifier.issn1754-5692
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/6906
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-6245
dc.language.isoen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subject.ddc690 Hausbau, Bauhandwerkde
dc.titleAnnihilation of structural defects in chalcogenide absorber films for high-efficiency solar cellsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1039/c6ee00402d
dcterms.bibliographicCitation.issue5
dcterms.bibliographicCitation.journaltitleEnergy & environmental scienceen
dcterms.bibliographicCitation.originalpublishernameRoyal Society of Chemistryde
dcterms.bibliographicCitation.originalpublisherplaceCambridgede
dcterms.bibliographicCitation.pageend1827
dcterms.bibliographicCitation.pagestart1818
dcterms.bibliographicCitation.volume9
tub.accessrights.dnbdomain
tub.affiliationFak. 3 Prozesswissenschaften::Inst. Werkstoffwissenschaften und -technologien::FG Metallische Werkstoffede
tub.affiliation.facultyFak. 3 Prozesswissenschaftende
tub.affiliation.groupFG Metallische Werkstoffede
tub.affiliation.instituteInst. Werkstoffwissenschaften und -technologiende
tub.publisher.universityorinstitutionTechnische Universität Berlin

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