Influencing modulation properties of quantum-dot semiconductor lasers by carrier lifetime engineering

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dc.contributor.authorLingnau, Benjamin
dc.contributor.authorLüdge, Kathy
dc.contributor.authorChow, Weng W.
dc.contributor.authorSchöll, Eckehard
dc.date.accessioned2022-01-06T20:25:01Z
dc.date.available2022-01-06T20:25:01Z
dc.date.issued2012-09-25
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 101, 131107 (2012) and may be found at https://doi.org/10.1063/1.4754588.en
dc.description.abstractThe relaxation oscillation (RO) parameters and modulation properties of quantum-dot lasers are investigated depending on effective charge carrier scattering lifetimes of the confined quantum-dot states. We find three dynamical regimes of the laser, characterized by the level of synchronization between carrier dynamics in quantum-dots and quantum-well. For scattering rates similar to the RO frequency, a strong damping is found. On either side of this regime, simulations show low RO damping and improved dynamical response. Depending on the regime, the modulation response differs from conventional analytical predictions. Our results suggest the possibility of tailoring quantum-dot laser dynamical behavior via bandstructure engineering.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16085
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14859
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.othersensitivityen
dc.subject.otherFermi-Dirac statisticsen
dc.subject.otherelectronic transporten
dc.subject.otherphononsen
dc.subject.othercondensed matter electronic structureen
dc.subject.otherelectron scatteringen
dc.subject.otherquantum wellsen
dc.subject.otherquantum dotsen
dc.subject.otherrelaxation oscillationsen
dc.subject.othersemiconductor lasersen
dc.subject.otherlasersen
dc.titleInfluencing modulation properties of quantum-dot semiconductor lasers by carrier lifetime engineeringen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber131107en
dcterms.bibliographicCitation.doi10.1063/1.4754588en
dcterms.bibliographicCitation.issue13en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume101en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Theoretische Physik::FG Nichtlineare Dynamik und Kontrollede
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Nichtlineare Dynamik und Kontrollede
tub.affiliation.instituteInst. Theoretische Physikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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