Comparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasers

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dc.contributor.authorArsenijević, Dejan
dc.contributor.authorSchliwa, Andrei
dc.contributor.authorSchmeckebier, Holger
dc.contributor.authorStubenrauch, Mirco
dc.contributor.authorSpiegelberg, M.
dc.contributor.authorBimberg, Dieter
dc.contributor.authorMikhelashvili, Vissarion
dc.contributor.authorEisenstein, Gadi
dc.date.accessioned2022-01-17T16:16:35Z
dc.date.available2022-01-17T16:16:35Z
dc.date.issued2014-05-07
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 104, 181101 (2014) and may be found at https://doi.org/10.1063/1.4875238.en
dc.description.abstractThe dynamic properties of ground- and excited-state emission in InAs/GaAs quantum-dot lasers operating close to 1.31 μm are studied systematically. Under low bias conditions, such devices emit on the ground state, and switch to emission from the excited state under large drive currents. Modification of one facet reflectivity by deposition of a dichroic mirror yields emission at one of the two quantum-dot states under all bias conditions and enables to properly compare the dynamic properties of lasing from the two different initial states. The larger differential gain of the excited state, which follows from its larger degeneracy, as well as its somewhat smaller nonlinear gain compression results in largely improved modulation capabilities. We demonstrate maximum small-signal bandwidths of 10.51 GHz and 16.25 GHz for the ground and excited state, respectively, and correspondingly, large-signal digital modulation capabilities of 15 Gb/s and 22.5 Gb/s. For the excited state, the maximum error-free bit rate is 25 Gb/s.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16143
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14917
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otheremission spectroscopyen
dc.subject.otherdopingen
dc.subject.otherelectrical properties and parametersen
dc.subject.othersignal processingen
dc.subject.otherquantum efficiencyen
dc.subject.otherquantum dotsen
dc.subject.othersemiconductorsen
dc.subject.otherpiezoelectricityen
dc.subject.otherlasersen
dc.subject.otheramplifiersen
dc.titleComparison of dynamic properties of ground- and excited-state emission in p-doped InAs/GaAs quantum-dot lasersen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber181101en
dcterms.bibliographicCitation.doi10.1063/1.4875238en
dcterms.bibliographicCitation.issue18en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume104en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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