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🆕 Date Issued:
2020-03-06
🗄 Date Available:2020-10-28
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Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

Hagedorn, Sylvia; Walde, Sebastian; Knauer, Arne; Susilo, Norman; Pacak, Daniel; Cancellara, Leonardo; Netzel, Carsten; Mogilatenko, Anna; Hartmann, Carsten; Wernicke, Tim; Kneissl, Michael; Weyers, Markus

FG Experimentelle Nanophysik und Photonik

Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high‐temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated.
AlGaNAlNepitaxial lateral overgrowthshigh-temperature annealingnanopatterned sapphiresultraviolet light-emitting diodes
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