Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes

dc.contributor.authorHagedorn, Sylvia
dc.contributor.authorWalde, Sebastian
dc.contributor.authorKnauer, Arne
dc.contributor.authorSusilo, Norman
dc.contributor.authorPacak, Daniel
dc.contributor.authorCancellara, Leonardo
dc.contributor.authorNetzel, Carsten
dc.contributor.authorMogilatenko, Anna
dc.contributor.authorHartmann, Carsten
dc.contributor.authorWernicke, Tim
dc.contributor.authorKneissl, Michael
dc.contributor.authorWeyers, Markus
dc.date.accessioned2020-10-28T09:18:31Z
dc.date.available2020-10-28T09:18:31Z
dc.date.issued2020-03-06
dc.date.updated2020-10-26T20:20:08Z
dc.description.abstractHerein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light‐emitting diodes (LEDs) with focus on the work done previously. Furthermore, approaches to improve the properties of such AlN/sapphire templates by the combination of high‐temperature annealing (HTA) and patterned AlN/sapphire interfaces are discussed. While the beneficial effect of HTA is demonstrated for UVC LEDs, the growth of relaxed AlGaN buffer layers on HTA AlN is a challenge. To achieve relaxed AlGaN with a low dislocation density, the applicability of HTA for AlGaN is investigated.en
dc.description.sponsorshipBMBF, 03ZZ0112A&B, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: AlN-Substrateen
dc.description.sponsorshipBMBF, 03ZZ0134B&C, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: UV Poweren
dc.description.sponsorshipBMBF, 03ZZ0138A&B, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: UV-LEDs für ultrakurze Wellenlängen um 230 nm auf Basis von AIN-Substraten (AIN-230nm)en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1862-6319
dc.identifier.issn1862-6300
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/11788
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-10680
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subject.ddc530 Physikde
dc.subject.otherAlGaNen
dc.subject.otherAlNen
dc.subject.otherepitaxial lateral overgrowthsen
dc.subject.otherhigh-temperature annealingen
dc.subject.othernanopatterned sapphiresen
dc.subject.otherultraviolet light-emitting diodesen
dc.titleStatus and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodesen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber1901022en
dcterms.bibliographicCitation.doi10.1002/pssa.201901022en
dcterms.bibliographicCitation.issue14en
dcterms.bibliographicCitation.journaltitlePhysica Status Solidi (A)en
dcterms.bibliographicCitation.originalpublishernameWileyen
dcterms.bibliographicCitation.originalpublisherplaceNew York, NYen
dcterms.bibliographicCitation.volume217en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Experimentelle Nanophysik und Photonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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