Population dependence of THz charge carrier mobility and non-Drude-like behavior in short semiconductor nanowires

dc.contributor.authorAchtstein, Alexander W.
dc.contributor.authorOwschimikow, Nina
dc.contributor.authorQuick, Michael T.
dc.date.accessioned2022-04-11T06:56:40Z
dc.date.available2022-04-11T06:56:40Z
dc.date.issued2021-12-02
dc.description.abstractWe investigate THz radiation absorption by charge carriers, focusing on the mobility in nanorods and wires. We show that for short rods the mobility is limited by the high spacing of the charge carrier energy levels, while for longer wires (greater 25 nm) finite dephasing results in considerably higher low frequency mobility. Analyzing the length, temperature and population dependence, we demonstrate that, apart from the temperature dependent dephasing, the mobility becomes strongly charge carrier population dependent. The latter results in no simple linear relationship between carrier density and conductivity. Additionally their thermal distribution determines the mobility, measured in experiments. We further show that Drude or Plasmon models apply only for long wires at elevated temperatures, while for short length quantization results in considerable alterations. In contrast to those phenomenological models, i.e. a negative imaginary part of the frequency-dependent conductivity in a nanosystem can be understood microscopically. Based on the results, we develop guidelines to analyze 1D terahertz conductivity spectra. Our approach provides also a new tool to optimize the mobility by nanowire length as well as to analyze the dephasing, not by conventional wave mixing techniques, but by coherent optical pump-THz probe spectroscopy.en
dc.description.sponsorshipTU Berlin, Open-Access-Mittel – 2021en
dc.identifier.eissn2040-3372
dc.identifier.issn2040-3364
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16697
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-15475
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by-nc/3.0/en
dc.subject.ddc540 Chemie und zugeordnete Wissenschaftende
dc.subject.otherTHz charge carrieren
dc.subject.othernon-Drude-like behavioren
dc.subject.othershort semiconductor nanowiresen
dc.subject.otherTHz radiationen
dc.subject.othernanorodsen
dc.titlePopulation dependence of THz charge carrier mobility and non-Drude-like behavior in short semiconductor nanowiresen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1039/D1NR06253Ken
dcterms.bibliographicCitation.issue1en
dcterms.bibliographicCitation.journaltitleNanoscaleen
dcterms.bibliographicCitation.originalpublishernameRoyal Society of Chemistryen
dcterms.bibliographicCitation.originalpublisherplaceLondonen
dcterms.bibliographicCitation.pageend25en
dcterms.bibliographicCitation.pagestart19en
dcterms.bibliographicCitation.volume14en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften>Inst. Optik und Atomare Physik>FG Nichtlineare Optikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Nichtlineare Optikde
tub.affiliation.instituteInst. Optik und Atomare Physikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen
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