High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

dc.contributor.authorGermann, Tim David
dc.contributor.authorStrittmatter, André
dc.contributor.authorPohl, J.
dc.contributor.authorPohl, Udo W.
dc.contributor.authorBimberg, Dieter
dc.contributor.authorRautiainen, Jussi
dc.contributor.authorGuina, Mircea
dc.contributor.authorOkhotnikov, Oleg G.
dc.date.accessioned2022-01-20T14:29:26Z
dc.date.available2022-01-20T14:29:26Z
dc.date.issued2008-03-13
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 92, 101123 (2008) and may be found at https://doi.org/10.1063/1.2898165.en
dc.description.abstractAn optically pumped semiconductor disk laser using submonolayer quantum dots (SML QDs) as gain medium is demonstrated. High-power operation is achieved with stacked InAs∕GaAs SML QDs grown by metal-organic vapor-phase epitaxy. Each SML-QD layer is formed from tenfold alternate depositions of nominally 0.5 ML InAs and 2.3 ML GaAs. Resonant periodic gain from a 13-fold nonuniform stack design of SML QDs allows to produce 1.4W cw at 1034nm. The disk laser demonstrates the promising potential of SML-QD structures combining properties of QD and quantum-well gain media for high-power applications.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.description.sponsorshipEC/FP6/016769/EU/Nano-Photonics Materials and Technologies for Multicolor High-Power Sources/NATALen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16179
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14953
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.othermaterials propertiesen
dc.subject.otherlaser materialsen
dc.subject.othersecond harmonic generationen
dc.subject.otherheat transferen
dc.subject.otherepitaxyen
dc.subject.otherquantum dotsen
dc.subject.othersemiconductor lasersen
dc.subject.otherquantum wellsen
dc.subject.otheroptical devicesen
dc.titleHigh-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dotsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber101123en
dcterms.bibliographicCitation.doi10.1063/1.2898165en
dcterms.bibliographicCitation.issue10en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume92en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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