Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements

dc.contributor.authorKirste, Ronny
dc.contributor.authorHoffmann, Marc P.
dc.contributor.authorTweedie, James
dc.contributor.authorBryan, Zachary
dc.contributor.authorCallsen, Gordon
dc.contributor.authorKure, Thomas
dc.contributor.authorNenstiel, Christian
dc.contributor.authorWagner, Markus R.
dc.contributor.authorCollazo, Ramón
dc.contributor.authorHoffmann, Axel
dc.contributor.authorSitar, Zlatko
dc.date.accessioned2020-02-27T16:15:44Z
dc.date.available2020-02-27T16:15:44Z
dc.date.issued2013-03-08
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Appl. Phys. 113, 103504 (2013) and may be found at https://doi.org/10.1063/1.4794094.en
dc.description.abstractCompensation effects in metal organic chemical vapour deposition grown GaN doped with magnesium are investigated with Raman spectroscopy and photoluminescence measurements. Examining the strain sensitive E2(high) mode, an increasing compressive strain is revealed for samples with Mg-concentrations lower than 7 × 1018 cm−3. For higher Mg-concentrations, this strain is monotonically reduced. This relaxation is accompanied by a sudden decrease in crystal quality. Luminescence measurements reveal a well defined near band edge luminescence with free, donor bound, and acceptor bound excitons as well as a characteristic donor acceptor pair (DAP) luminescence. Following recent results, three acceptor bound excitons and donor acceptor pairs are identified. Along with the change of the strain, a strong modification in the luminescence of the dominating acceptor bound exciton and DAP luminescence is observed. The results from Raman spectroscopy and luminescence measurements are interpreted as fingerprints of compensation effects in GaN:Mg leading to the conclusion that compensation due to defect incorporation triggered by Mg-doping already affects the crystal properties at doping levels of around 7 × 1018 cm−3. Thereby, the generation of nitrogen vacancies is introduced as the driving force for the change of the strain state and the near band edge luminescence.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1089-7550
dc.identifier.issn0021-8979
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/10851
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-9746
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherRaman spectroscopyen
dc.subject.othercompensation effectsen
dc.subject.otherphotoluminescence measurementsen
dc.titleCompensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurementsen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber103504en
dcterms.bibliographicCitation.doi10.1063/1.4794094en
dcterms.bibliographicCitation.issue10en
dcterms.bibliographicCitation.journaltitleJournal of Applied Physicsen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume113en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Optische Charakterisierung von Halbleiternde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Optische Charakterisierung von Halbleiternde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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