Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

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dc.contributor.authorKolbe, Tim
dc.contributor.authorKnauer, Arne
dc.contributor.authorRass, Jens
dc.contributor.authorCho, Hyun
dc.contributor.authorHagedorn, Sylvia
dc.contributor.authorEinfeldt, Sven
dc.contributor.authorKneissl, Michael
dc.contributor.authorWeyers, Markus
dc.date.accessioned2019-08-09T11:02:34Z
dc.date.available2019-08-09T11:02:34Z
dc.date.issued2017-12-06
dc.date.updated2019-07-31T14:39:41Z
dc.description.abstractThe effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measurements. The light output power depends strongly on the temporal biscyclopentadienylmagnesium (Cp 2 Mg) carrier gas flow profile during growth as well as on the aluminum profile of the AlGaN:Mg EBL. The highest emission power has been found for an EBL with the highest Cp 2 Mg carrier gas flow and a gradually decreasing aluminum content in direction to the p-side of the LED. This effect is attributed to an improved carrier injection and confinement that prevents electron leakage into the p-doped region of the LED with a simultaneously enhanced carrier injection into the active region.en
dc.description.sponsorshipBMBF, 03ZZ0105A, Zwanzig20 - Advanced UV for Life - Verbundvorhaben - UV-B effizient; TP1: UV-B-LEDs hoher Ausbeute, Effizienz und Leistung (UV-B Effizient) Effiziente Prozesse für Basisschichten und Chipherstellungen
dc.description.sponsorshipBMBF, 03ZZ0130A, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: Zuverlässigkeit von UV-LEDs; TP1: Analyse von Degradationsmechanismen in UVB- und UVC-LEDsen
dc.description.sponsorshipBMBF, 03ZZ0134B, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: UV Power; TP2: Entwicklung von high-power UVB-LEDs um 300 nmen
dc.identifier.eissn1996-1944
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/9748
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-8781
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc600 Technik, Technologiede
dc.subject.otherlight emitting diodeen
dc.subject.otherLEDen
dc.subject.otherultravioleten
dc.subject.otherUVen
dc.subject.otherelectron blocking layeren
dc.subject.otherEBLen
dc.subject.otherMOVPEen
dc.subject.otherdopingen
dc.subject.othersimulationen
dc.subject.otherheterostructureen
dc.titleEffect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodesen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber1396en
dcterms.bibliographicCitation.doi10.3390/ma10121396en
dcterms.bibliographicCitation.issue12en
dcterms.bibliographicCitation.journaltitleMaterialsen
dcterms.bibliographicCitation.originalpublishernameMDPIen
dcterms.bibliographicCitation.originalpublisherplaceBaselen
dcterms.bibliographicCitation.volume10en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::FG Experimentelle Nanophysik und Photonikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupFG Experimentelle Nanophysik und Photonikde
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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