Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes

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dc.contributor.authorHagedorn, Sylvia
dc.contributor.authorWalde, Sebastian
dc.contributor.authorSusilo, Norman
dc.contributor.authorNetzel, Carsten
dc.contributor.authorTillner, Nadine
dc.contributor.authorUnger, Ralph-Stephan
dc.contributor.authorManley, Phillip
dc.contributor.authorZiffer, Eviathar
dc.contributor.authorWernicke, Tim
dc.contributor.authorBecker, Christiane
dc.contributor.authorLugauer, Hans-Jürgen
dc.contributor.authorKneissl, Michael
dc.contributor.authorWeyers, Markus
dc.date.accessioned2020-10-30T09:06:34Z
dc.date.available2020-10-30T09:06:34Z
dc.date.issued2020-01-27
dc.date.updated2020-10-12T13:47:55Z
dc.description.abstractHerein, AlN growth by metalorganic vapor‐phase epitaxy on hole‐type nanopatterned sapphire substrates is investigated. Cracking occurs for an unexpectedly thin‐layer thickness, which is associated to altered nucleation conditions caused by the sapphire pattern. To overcome the obstacle of cracking and at the same time to decrease the threading dislocation density by an order of magnitude, high‐temperature annealing (HTA) of a 300 nm‐thick AlN starting layer is successfully introduced. By this method, 800 nm‐thick, fully coalesced and crack‐free AlN is grown on 2 in. nanopatterned sapphire wafers. The usability of such templates as basis for UVC light‐emitting diodes (LEDs) is furthermore proved by subsequent growth of an UVC‐LED heterostructure with single peak emission at 265 nm. Prerequisites for the enhancement of the light extraction efficiency by hole‐type nanopatterned sapphire substrates are discussed.en
dc.description.sponsorshipBMBF, 03ZZ0134B, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: UV Power; TP2: Entwicklung von high-power UVB-LEDs um 300 nmen
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1862-6319
dc.identifier.issn1862-6300
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/11810
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-10699
dc.language.isoenen
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc530 Physikde
dc.subject.otherAlNen
dc.subject.otherhigh-temperature annealingen
dc.subject.othermetalorganic vapor-phase epitaxyen
dc.subject.othernanopatterned sapphire substratesen
dc.subject.otherultraviolet light-emitting diodesen
dc.titleImproving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodesen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber1900796en
dcterms.bibliographicCitation.doi10.1002/pssa.201900796en
dcterms.bibliographicCitation.issue7en
dcterms.bibliographicCitation.journaltitlephysica status solidi (a)en
dcterms.bibliographicCitation.originalpublishernameWileyen
dcterms.bibliographicCitation.originalpublisherplaceOxford [u.a.]en
dcterms.bibliographicCitation.volume217en
tub.accessrights.dnbfreeen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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