Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography
The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10±2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. High-purity single-photon emission with g(2)(0)<0.01 from such deterministic structure has been demonstrated under quasi-resonant excitation.
Published in: AIP Advances, 10.1063/1.5038137, American Institute of Physics (AIP)
- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in AIP Advances 8, 085205 (2018) and may be found at https://doi.org/10.1063/1.5038137.