Lateral positioning of InGaAs quantum dots using a buried stressor

dc.contributor.authorStrittmatter, André
dc.contributor.authorSchliwa, Andrei
dc.contributor.authorSchulze, J.-H.
dc.contributor.authorGermann, Tim David
dc.contributor.authorDreismann, A.
dc.contributor.authorHitzemann, Ole
dc.contributor.authorStock, Erik
dc.contributor.authorOstapenko, Irina
dc.contributor.authorRodt, Sven
dc.contributor.authorUnrau, Waldemar
dc.contributor.authorPohl, Udo W.
dc.contributor.authorHoffmann, Axel
dc.contributor.authorBimberg, Dieter
dc.contributor.authorHaisler, V.
dc.date.accessioned2022-01-18T06:54:14Z
dc.date.available2022-01-18T06:54:14Z
dc.date.issued2012-03-01
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 100, 093111 (2012) and may be found at https://doi.org/10.1063/1.3691251.en
dc.description.abstractWe present a “bottom-up” approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16154
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14928
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherstatistical mechanics modelsen
dc.subject.otherchemical elementsen
dc.subject.otherfree energyen
dc.subject.othersurface strainsen
dc.subject.othermicroscopyen
dc.subject.otheretchingen
dc.subject.otherepitaxyen
dc.subject.otheroptical propertiesen
dc.subject.otheroxidesen
dc.subject.otherP-N junctionsen
dc.titleLateral positioning of InGaAs quantum dots using a buried stressoren
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber093111en
dcterms.bibliographicCitation.doi10.1063/1.3691251en
dcterms.bibliographicCitation.issue9en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume100en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysikde
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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