Room temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodes

dc.contributor.authorMunsch, Mathieu
dc.contributor.authorClaudon, Julien
dc.contributor.authorMalik, N. S.
dc.contributor.authorGilbert, K.
dc.contributor.authorGrosse, P.
dc.contributor.authorGérard, Jean-Michel
dc.contributor.authorAlbert, F.
dc.contributor.authorLanger, Fabian
dc.contributor.authorSchlereth, T.
dc.contributor.authorPieczarka, Maciej M.
dc.contributor.authorHöfling, Sven
dc.contributor.authorKamp, Martin
dc.contributor.authorForchel, Alfred
dc.contributor.authorReitzenstein, Stephan
dc.date.accessioned2022-01-29T09:13:15Z
dc.date.available2022-01-29T09:13:15Z
dc.date.issued2012-01-20
dc.descriptionThis content may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This material originally appeared in Appl. Phys. Lett. 100, 031111 (2012) and may be found at https://doi.org/10.1063/1.3678031.en
dc.description.abstractWe demonstrate room temperature, continuous wave lasing of laser diodes based on AlGaAs whispering gallery mode (WGM) resonators (microcylinder and microring) embedding a quantum dot (QD) active layer. Using InGaAlAs QDs, high-Q (>60 000) lasing modes are observed around 910 nm, up to 50 °C. Lasing with similar performance is obtained around 1230 nm, using InAs QDs. Furthermore, we show that the current injection in the active part of the device is improved in ring resonators, leading to threshold currents of approximately 4 mA for a device with 80 μm diameter. This geometry also suppresses WGMs with a high radial order, thus simplifying the lasing spectra. In these conditions, stable single-mode and two-color lasing can be obtained.en
dc.description.sponsorshipEC/FP7/250056/EU/Terahertz room-temperature integrated parametric source/TREASUREen
dc.identifier.eissn1077-3118
dc.identifier.issn0003-6951
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16221
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-14996
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherelectrical properties and parametersen
dc.subject.otherfocused ion beamen
dc.subject.otheroptical fielden
dc.subject.otherdifference frequency generationen
dc.subject.otherwhispering gallery waveen
dc.subject.otherepitaxyen
dc.subject.otherquantum dotsen
dc.subject.otherelectrical characterizationen
dc.subject.otherlasersen
dc.subject.othersemiconductor materialsen
dc.titleRoom temperature, continuous wave lasing in microcylinder and microring quantum dot laser diodesen
dc.typeArticleen
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.articlenumber031111en
dcterms.bibliographicCitation.doi10.1063/1.3678031en
dcterms.bibliographicCitation.issue3en
dcterms.bibliographicCitation.journaltitleApplied Physics Letters (APL)en
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume100en
tub.accessrights.dnbdomainen
tub.affiliationFak. 2 Mathematik und Naturwissenschaften::Inst. Festkörperphysik::AG Optoelektronik und Quantenbauelementede
tub.affiliation.facultyFak. 2 Mathematik und Naturwissenschaftende
tub.affiliation.groupAG Optoelektronik und Quantenbauelementede
tub.affiliation.instituteInst. Festkörperphysikde
tub.publisher.universityorinstitutionTechnische Universität Berlinen

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