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Micropillars with a controlled number of site-controlled quantum dots

Kaganskiy, Arsenty; Gericke, Fabian; Heindel, Tobias; Porte, Xavier; Reitzenstein, Stephan

We report on the realization of micropillars with site-controlled quantum dots (SCQDs) in the active layer. The SCQDs are grown via the buried stressor approach which allows for the positioned growth and device integration of a controllable number of QDs with high optical quality. This concept is very powerful as the number and the position of SCQDs in the cavity can be simultaneously controlled by the design of the buried-stressor. The fabricated micropillars exhibit a high degree of position control for the QDs above the buried stressor and Q-factors of up to 12 000 at an emission wavelength of around 930 nm. We experimentally analyze and numerically model the cavity Q-factor, the mode volume, the Purcell factor, and the photon-extraction efficiency as a function of the aperture diameter of the buried stressor. Exploiting these SCQD micropillars, we experimentally observe a Purcell enhancement in the single-QD regime with FP = 4.3 ± 0.3.
Published in: Applied Physics Letters, 10.1063/1.5017692, American Institute of Physics (AIP)
  • This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 112, 071101 (2018) and may be found at https://doi.org/10.1063/1.5017692.