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Single-photon emission from InGaAs quantum dots grown on (111) GaAs
Stock, Erik; Warming, Till; Ostapenko, Irina; Rodt, Sven; Schliwa, Andrei; Töfflinger, Jan Amaru; Lochmann, Anatol; Toropov, Aleksandr I.; Moshchenko, Sergej A.; Dmitriev, Dimitry V.; Haisler, Vladimir A.; Bimberg, Dieter
In this letter, we demonstrate that self-organized InGaAs quantum dots (QDs) grown on GaAs (111) substrate using droplet epitaxy have great potential for the generation of entangled photon pairs. The QDs show spectrally sharp luminescence lines and low spatial density. A second order correlation value of g(2)(0)<0.3 proves single-photon emission. By comparing the power dependence of the luminescence from a number of QDs we identify a typical luminescence fingerprint. In polarization dependent microphotoluminescence studies a fine-structure splitting ranging ≤40𝜇eV down to the determination limit of our setup (10𝜇eV) was observed.
- This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 093112 (2010) and may be found at https://doi.org/10.1063/1.3337097.
