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Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)

Sala, Elisa M.; Stracke, G.; Selve, S.; Niermann, T.; Lehmann, M.; Schlichting, S.; Nippert, Felix; Callsen, G.; Strittmatter, André; Bimberg, Dieter

Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.
Published in: Applied Physics Letters, 10.1063/1.4962273, American Institute of Physics (AIP)
  • This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 109, 102102 (2016) and may be found at https://doi.org/10.1063/1.4962273