Evaluation of GaN-HEMT power amplifiers using BST-based components for load modulation

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dc.contributor.authorArnous, Mhd. Tareq
dc.contributor.authorWiens, Alex
dc.contributor.authorSaad, Paul
dc.contributor.authorPreis, Sebastian
dc.contributor.authorZhang, Zihui
dc.contributor.authorJakoby, Rolf
dc.contributor.authorBöck, Georg
dc.date.accessioned2018-02-12T09:42:45Z
dc.date.available2018-02-12T09:42:45Z
dc.date.issued2014
dc.descriptionDieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.de
dc.descriptionThis publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.en
dc.description.abstractIn this paper, the concept of load-modulated power amplifiers (PAs) is studied. Two GaN-HEMT power amplifiers (PAs), targeted for high efficiency at maximum and output back-off (OBO) power levels, are designed, implemented, and tested across 1.8–2.2 GHz. The load modulation in the first design is realized by tuning the shunt capacitors in the output matching network. A novel method is employed in the second design, where barium–stronrium–titante is used for the realization of load modulation. The large-signal measurement results across the desired band show 59–70% drain efficiency at 44–44.5 dBm output power for both designs. Using the available tunable technique, the drain efficiency of the PAs is enhanced by 4–20% at 6 dB OBO across the bandwidth.en
dc.identifier.eissn1759-0795
dc.identifier.issn1759-0787
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/7419
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-6669
dc.language.isoen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subject.ddc620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
dc.subject.otheradaptive matchingen
dc.subject.otherbroadbanden
dc.subject.otherBSTen
dc.subject.otherdynamic loaden
dc.subject.otherefficiency enhancementen
dc.subject.otherferroelectricsen
dc.subject.otherGaN-HEMTen
dc.subject.otherload modulationen
dc.subject.otherpower amplifieren
dc.subject.othertunable componenten
dc.titleEvaluation of GaN-HEMT power amplifiers using BST-based components for load modulationen
dc.typeArticle
dc.type.versionpublishedVersion
dcterms.bibliographicCitation.doi10.1017/s1759078714000518
dcterms.bibliographicCitation.issue3-4
dcterms.bibliographicCitation.journaltitleInternational journal of microwave and wireless technologies
dcterms.bibliographicCitation.originalpublishernameCambridge University Press
dcterms.bibliographicCitation.originalpublisherplaceCambridge
dcterms.bibliographicCitation.pageend263
dcterms.bibliographicCitation.pagestart253
dcterms.bibliographicCitation.volume6
tub.accessrights.dnbdomain
tub.affiliationFak. 4 Elektrotechnik und Informatik::Inst. Hochfrequenz- und Halbleiter-Systemtechnologien::FG Mikrowellentechnikde
tub.affiliation.facultyFak. 4 Elektrotechnik und Informatikde
tub.affiliation.groupFG Mikrowellentechnikde
tub.affiliation.instituteInst. Hochfrequenz- und Halbleiter-Systemtechnologiende
tub.publisher.universityorinstitutionTechnische Universität Berlin

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