Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer
| dc.contributor.author | Arnous, Mhd Tareq | |
| dc.contributor.author | Zhang, Zihui | |
| dc.contributor.author | Rautschke, Felix | |
| dc.contributor.author | Böck, Georg | |
| dc.date.accessioned | 2019-02-11T17:20:58Z | |
| dc.date.available | 2019-02-11T17:20:58Z | |
| dc.date.issued | 2017 | |
| dc.description | Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich. | de |
| dc.description | This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively. | en |
| dc.description.abstract | In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz. | en |
| dc.description.sponsorship | EC/FP7/288531/EU/Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems/NANOTEC | en |
| dc.identifier.eissn | 1759-0795 | |
| dc.identifier.issn | 1759-0787 | |
| dc.identifier.uri | https://depositonce.tu-berlin.de/handle/11303/9094 | |
| dc.identifier.uri | http://dx.doi.org/10.14279/depositonce-8195 | |
| dc.language.iso | en | |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
| dc.subject.ddc | 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten | de |
| dc.title | Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer | en |
| dc.type | Article | en |
| dc.type.version | publishedVersion | en |
| dcterms.bibliographicCitation.doi | 10.1017/S1759078717000125 | |
| dcterms.bibliographicCitation.issue | 6 | |
| dcterms.bibliographicCitation.journaltitle | International Journal of Microwave and Wireless Technologies | en |
| dcterms.bibliographicCitation.originalpublishername | Cambridge University Press | en |
| dcterms.bibliographicCitation.pageend | 1269 | |
| dcterms.bibliographicCitation.pagestart | 1261 | |
| dcterms.bibliographicCitation.volume | 9 | |
| tub.accessrights.dnb | domain | |
| tub.affiliation | Fak. 4 Elektrotechnik und Informatik::Inst. Hochfrequenz- und Halbleiter-Systemtechnologien::FG Mikrowellentechnik | de |
| tub.affiliation.faculty | Fak. 4 Elektrotechnik und Informatik | de |
| tub.affiliation.group | FG Mikrowellentechnik | de |
| tub.affiliation.institute | Inst. Hochfrequenz- und Halbleiter-Systemtechnologien | de |
| tub.publisher.universityorinstitution | Technische Universität Berlin | de |
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