Tolunay Wipf, SelinGöritz, AlexanderWietstruck, MatthiasWipf, ChristianTillack, BerndMai, AndreasKaynak, Mehmet2019-02-112019-02-1120171759-0787https://depositonce.tu-berlin.de/handle/11303/9093http://dx.doi.org/10.14279/depositonce-8194Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF-MEMS) switch is presented. The EM model of the WLE RF-MEMS switch is developed to estimate its RF performance. After the fabrication of the switch, the EM model is used to get accurate S-parameter simulation results. Alternative to the EM model, a small-signal model of the fabricated WLE RF-MEMS switch is developed. The developed model is integrated into a 0.13 µm SiGe BiCMOS process technology design kit for fast simulations and to predict the RF performance of the switch from a pure electrical point of view. The 0.13 µm SiGe BiCMOS embedded WLE RF-MEMS shows beyond state-of-the-art measured RF performances in D-band (110–170 GHz) and provides a high capacitance Con/Coff ratio of 11.1. The results of the both EM model and small-signal model of the switch are in very good agreement with the S-parameter measurements in D-band. The measured maximum isolation of the WLE RF-MEMS switch is 51.6 dB at 142.8 GHz with an insertion loss of 0.65 dB.en620 Ingenieurwissenschaften und zugeordnete TätigkeitenBiCMOSmm-wavewide bandRF-MEMSSPSTencapsulationmonolithic integrationpackagingmodelingArticle1759-0795